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MMUN2216LT1G

Onsemi

MMUN2216LT1G by Onsemi

MMUN2216LT1G by Onsemi is a NPN BJT transistor with a max VCEsat of 0.25V and min hFE of 160. It is used for switching applications, has a max collector-emitter voltage of 50V, and can handle a max collector current of 0.1A.

Median Price

$0.034

Lifecycle Status

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32

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1k+

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Newark

USA . 34 parts In-Stock

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DigiKey

USA . 22,220 parts In-Stock

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Mouser Electronics

USA . 15,503 parts In-Stock

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Arrow

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Farnell

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Chip1Stop

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Verical

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Master Electronics

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Element14

Singapore . 7,935 parts In-Stock

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Greenchips

USA . 9,000 parts In-Stock

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Digiode

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Nova Conductors

Japan . 100 parts In-Stock

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Bristol Electronics

USA . 16,297 parts In-Stock

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DF Sales Co.

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DF Sales Co.

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TME

Poland . 637 parts In-Stock

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IBS Electronics

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NAC Semi

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Sensible Micro Corp

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Atlantic Semiconductor

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PC Components Company LLC

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Corohmni

South Africa . 198 parts In-Stock

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Semicontronic

India . 93,853 parts In-Stock

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Ampacity Inc.

Singapore . 88,760 parts In-Stock

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Corphita

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Component Stockers USA

USA . 190,956 parts In-Stock

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Argo Parts USA

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Aztec Data Supply Inc.

USA . 2,595 parts In-Stock

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Perfect Parts

USA . 324,645 parts In-Stock

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CPlus Electronics

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Metaverse IC Inc.

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Authorized Procurement Solutions

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TANS Electronics

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Kulean Microsystems

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Problanco Electronics

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Continental Prestige Electronics

USA . 935 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Overview

Discover the MMUN2216LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a NPN configuration and built-in resistor, this transistor offers reliable performance and efficiency. The MMUN2216LT1G is perfect for a wide range of electronics projects, delivering seamless functionality and ease of use. Trust in Onsemi's reputation for excellence and innovation when you choose this product. Unlock new possibilities and unleash your creativity with the MMUN2216LT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

The NPN configuration allows for easy integration into existing circuits and ensures compatibility with other components.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making this transistor a convenient choice for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and efficient switching performance.

Surface Mount: YES

The surface mount capability makes for easy and efficient assembly onto PCBs, saving time and effort during manufacturing.

Maximum VCEsat: 0.25 V

The low VCEsat ensures minimal power loss and high efficiency in switching operations, making this transistor energy-efficient.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and soldering on the PCB, enhancing the overall reliability of the circuit.

Terminal Form: GULL WING

The gull wing terminal form offers secure solder connections and prevents issues with solder bridging, ensuring reliable performance.

No. of Terminals: 3

With 3 terminals, this transistor is easy to interface with and provides flexibility in circuit connection.

Maximum Power Dissipation (Abs): 0.4 W

The high power dissipation capability allows for reliable operation under varying load conditions, making this transistor suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, enabling compact and efficient circuit designs.

Minimum DC Current Gain (hFE): 160

The minimum DC current gain ensures consistent and stable amplification of the input signal, making this transistor reliable in amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and operate reliably in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for safe operation in high voltage circuits, providing protection against voltage spikes.

Transistor Element Material: SILICON

Silicon transistor elements offer high performance and reliability, making this transistor suitable for a wide range of applications.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this transistor can operate in extremely cold environments without loss of performance.

Maximum Collector Current (IC): 0.1 A

The high collector current rating allows for handling higher current loads, making this transistor suitable for applications with higher power requirements.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin terminal finish provides corrosion resistance and improves solderability, ensuring long-term reliability in various operating conditions.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and enables multiple connection options, enhancing the usability of this transistor.

Maximum Time At Peak Reflow Temperature (s): 40

The high maximum time at peak reflow temperature allows for reliable solder connections during assembly, ensuring proper functioning of the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures proper solder melting and bonding, resulting in secure and durable connections for this transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2216LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signals

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.25 V

Trade Compliance

MMUN2216LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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