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MMUN2112LT1

Onsemi

MMUN2112LT1 by Onsemi

MMUN2112LT1 by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 60. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Rochester

USA . 111,000 parts In-Stock

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$0.030

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$0.023

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Verical

USA . 111,000 parts In-Stock

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Digiode

USA . 1,068 parts In-Stock

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DigiKey Marketplace

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Vyrian

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Chip Stock

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EMSNET

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Nova Conductors

Japan . 870 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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Ampacity Inc.

Singapore . 110,500 parts In-Stock

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$0.021

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Corphita

USA . 96 parts In-Stock

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Corohmni

South Africa . 83 parts In-Stock

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Aztec Data Supply Inc.

USA . 35,092 parts In-Stock

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$0.878

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Continental Prestige Electronics

USA . 111,000 parts In-Stock

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RC Electronics

USA . 25,000 parts In-Stock

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Assy Fe

Spain . 23,990 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Aranea Global

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Argo Parts USA

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Problanco Electronics

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UHIMA Technologies

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TANS Electronics

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Overview

Enhance your electronic designs with the MMUN2112LT1 by Onsemi, a top-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a renowned industry leader, this PNP transistor with a built-in resistor is ideal for switching applications. With a compact design and excellent power dissipation capabilities, this transistor provides value and benefits to customers seeking efficient and high-performing components for their projects. Trust Onsemi's expertise and choose the MMUN2112LT1 for your next electronics project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package material provides good thermal and electrical insulation, protecting the transistor from external elements and ensuring reliable performance.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch configurations, making this transistor suitable for switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design by eliminating the need for an external resistor, reducing component count and board space.

Transistor Application: SWITCHING

Designed for switching applications, this transistor has fast switching speeds and is suitable for use in digital circuits and power control applications.

Surface Mount: YES

Being surface mountable, this transistor is suitable for automated assembly processes, reducing production time and costs.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on a circuit board, optimizing space utilization and facilitating compact designs.

Terminal Form: GULL WING

Gull wing terminals provide reliable connections during surface mount assembly, ensuring secure attachment to the circuit board.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle power levels within its specified range, making it suitable for low-power applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves board space and allows for high-density mounting, enabling compact and portable electronic devices.

Minimum DC Current Gain (hFE): 60

High DC current gain ensures amplification of input signals with high accuracy and low distortion, making this transistor ideal for amplification applications.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can withstand higher voltage levels, making it suitable for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material offers high reliability, temperature stability, and performance, ensuring consistent operation over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, this transistor is suitable for low to medium current applications such as signal amplification.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish provides good solderability, ensuring reliable solder joints during assembly and maintenance processes.

Terminal Position: DUAL

Dual terminal position allows for easy connection to external circuitry, enhancing flexibility and compatibility with various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is suitable for reflow soldering processes, ensuring reliable solder connections.

Peak Reflow Temperature °C: 235

Peak reflow temperature of 235°C allows for efficient soldering without causing damage to the transistor, ensuring reliable and durable connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2112LT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2112LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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