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MMUN2233LT1G

Onsemi

MMUN2233LT1G by Onsemi

MMUN2233LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This small outline package with gull wing terminals operates up to 150°C, making it ideal for surface mount applications requiring high power dissipation.

Median Price

$0.039

Lifecycle Status

Suppliers In-Stock

34

In-Stock Inventory

1k+

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Newark

USA . 37 parts In-Stock

1+ parts

$0.135

100+ parts

$0.056

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$0.037

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37

$0.135

$0.056

$0.037

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DigiKey

USA . 56,744 parts In-Stock

1+ parts

$0.140

100+ parts

$0.053

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$0.034

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56,744

$0.140

$0.053

$0.034

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Mouser Electronics

USA . 6,670 parts In-Stock

1+ parts

$0.290

100+ parts

$0.064

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$0.038

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$0.033

6,670

$0.290

$0.064

$0.038

$0.033

Adafruit Industries

USA . 500 parts In-Stock

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$1.307

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$1.242

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$1.242

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$1.307

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Future Electronics

Canada . 1,254,000 parts In-Stock

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EBV Elektronik

Germany . 1,158,000 parts In-Stock

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Verical

USA . 156,000 parts In-Stock

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Master Electronics

USA . 156,000 parts In-Stock

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Arrow

USA . 111,000 parts In-Stock

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RS (Exports)

UK . 4,000 parts In-Stock

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Chip1Stop

Japan . 11 parts In-Stock

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Rochester

USA . 2 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 1,237 parts In-Stock

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$0.005

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Ozdisan Elektronik

Türkiye . 2,845 parts In-Stock

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Nova Conductors

Japan . 18 parts In-Stock

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Bristol Electronics

USA . 148,900 parts In-Stock

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$0.056

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Maritex

Poland . 1,458 parts In-Stock

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$0.270

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$0.060

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$0.040

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$0.028

1,458

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NAC Semi

USA . 4,056,000 parts In-Stock

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Vyrian

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Chip Stock

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IBS Electronics

USA . 147,000 parts In-Stock

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J2 Sourcing AB

Sweden . 120,000 parts In-Stock

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Cyclops Electronics Ltd

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ComSIT Distribution GmbH

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Lantek

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Diverse Electronics

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Infinite Electronics LLP

India . 2,313 parts In-Stock

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Atlantic Semiconductor

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Ukraine . 120 parts In-Stock

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Prism Electronics

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Corphita

USA . 1,691 parts In-Stock

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Corohmni

South Africa . 376 parts In-Stock

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Ampacity Inc.

Singapore . 579,800 parts In-Stock

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Semicontronic

India . 612,512 parts In-Stock

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Argo Parts USA

USA . 79 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 1,008,431 parts In-Stock

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$0.022

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.307

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$1.242

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$1.307

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Aztec Data Supply Inc.

USA . 84 parts In-Stock

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$1.720

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Perfect Parts

USA . 6,491,888 parts In-Stock

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Eastek

USA . 1,287,000 parts In-Stock

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GreenTree Electronics

Israel . 1,275,000 parts In-Stock

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Authorized Procurement Solutions

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Glotronic Ltd.

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RC Electronics

USA . 108,962 parts In-Stock

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Metaverse IC Inc.

Canada . 78,000 parts In-Stock

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Kepictronics

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iodParts Technologies Inc.

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Singapore . 20,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Robosynatics

Brazil . 14,510 parts In-Stock

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$1.295

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Lucentia Tech

USA . 14,510 parts In-Stock

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$1.322

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Kulean Microsystems

USA . 7,179 parts In-Stock

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ChipstoGo Electronic ltd

UK . 6,000 parts In-Stock

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Problanco Electronics

Mexico . 4,838 parts In-Stock

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TANS Electronics

Latvia . 2,557 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,488 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

USA . 1,075 parts In-Stock

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SupplyDigital Components

Austria . 450 parts In-Stock

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UHIMA Technologies

Türkiye . 137 parts In-Stock

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Overview

Discover the MMUN2233LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their top-notch products, this NPN transistor comes in a compact rectangular package with gull wing terminals. With a built-in resistor and a minimum DC current gain of 80, this transistor offers reliable performance and efficient power dissipation up to 0.2W. Ideal for various electronic projects, the MMUN2233LT1G provides customers with value, benefits, and advantages that exceed expectations. Power up your designs with Onsemi's superior quality transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this product suitable for a wide range of circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for applications where space is limited.

Transistor Application: SWITCHING

Designed for switching applications, offering fast switching speeds and high efficiency, making it ideal for use in electronic devices.

Surface Mount: YES

Surface mount package allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape provides compatibility with standard PCB layouts, making it easy to integrate into existing designs.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation capacity, this transistor can handle high-power applications without overheating.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures stable and reliable operation in amplification and switching circuits, offering consistent performance.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

With a high voltage rating, this transistor can handle higher voltage levels in circuits, providing reliable performance in a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling high collector current, this transistor is suitable for applications requiring high current switching or amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2233LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2233LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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