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MMUN2232LT1G

Onsemi

MMUN2232LT1G by Onsemi

MMUN2232LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.4W. This small outline transistor operates up to 150°C and is surface mountable in a rectangular package shape with gull wing terminals.

Median Price

$0.044

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Suppliers In-Stock

37

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1k+

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Newark

USA . 476 parts In-Stock

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$0.135

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$0.055

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$0.048

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$0.135

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Mouser Electronics

USA . 79,419 parts In-Stock

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$0.034

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Avnet

USA . 4,893,000 parts In-Stock

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EBV Elektronik

Germany . 2,679,000 parts In-Stock

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Arrow

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Verical

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DigiKey

USA . 117,679 parts In-Stock

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Flip Electronics (Authorized)

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Farnell

UK . 26,166 parts In-Stock

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Element14

Singapore . 26,166 parts In-Stock

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Chip1Stop

Japan . 3,050 parts In-Stock

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Digiode

USA . 1,707 parts In-Stock

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DF Sales Co.

USA . 2,870 parts In-Stock

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DF Sales Co.

USA . 2,870 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Bristol Electronics

USA . 20,398 parts In-Stock

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TME

Poland . 8,524 parts In-Stock

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Maritex

Poland . 92,020 parts In-Stock

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NAC Semi

USA . 1,482,000 parts In-Stock

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IBS Electronics

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Vyrian

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ComSIT USA

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LittleDiode

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Ampacity Inc.

Singapore . 87,859 parts In-Stock

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Semicontronic

India . 87,790 parts In-Stock

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Corphita

USA . 1,040 parts In-Stock

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Corohmni

South Africa . 77 parts In-Stock

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Argo Parts USA

USA . 2,024 parts In-Stock

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Netroflash

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Continental Prestige Electronics

USA . 7,789 parts In-Stock

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Aztec Data Supply Inc.

USA . 594 parts In-Stock

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Benley Electronics

USA . 6 parts In-Stock

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Perfect Parts

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Eastek

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Metaverse IC Inc.

Canada . 120,000 parts In-Stock

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RC Electronics

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Futuretech Components

Singapore . 42,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Glotronic Ltd.

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Authorized Procurement Solutions

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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SupplyDigital Components

Austria . 8,179 parts In-Stock

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Kulean Microsystems

USA . 7,381 parts In-Stock

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Problanco Electronics

Mexico . 5,398 parts In-Stock

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Kepictronics

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TANS Electronics

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UHIMA Technologies

Türkiye . 961 parts In-Stock

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Overview

Unlock the power of reliable performance with the MMUN2232LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor offers unparalleled switching capabilities for a variety of applications. With a single configuration and built-in resistor, this surface-mount transistor provides maximum efficiency and ease of use. Experience the benefits of high-quality materials, superior design, and exceptional value with the MMUN2232LT1G. Trust Onsemi for cutting-edge technology that delivers results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used and offer high efficiency in switching applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces overall component count.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable performance.

Surface Mount: YES

Easy surface mount installation saves time and allows for compact circuit designs.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to handle and mount in different devices and circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during assembly.

No. of Terminals: 3

Three terminals allow for simple and direct connections in a circuit.

Maximum Power Dissipation (Abs): 0.4 W

With a maximum power dissipation of 0.4 watts, this transistor can handle high power loads efficiently.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves board space and allows for compact designs.

Minimum DC Current Gain (hFE): 15

A minimum DC current gain of 15 ensures reliable and consistent performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50V allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in different operating conditions.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Matte tin finish provides corrosion resistance and reliable solder joints.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connection and layout.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperature for up to 40 seconds, ensuring proper soldering and reliability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C allows for efficient and reliable soldering during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2232LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2232LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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