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MMUN2132LT1G

Onsemi

MMUN2132LT1G by Onsemi

MMUN2132LT1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and power dissipation of 0.2W. This surface-mount device comes in a small outline package with gull wing terminals, suitable for high-temperature environments up to 150°C.

Median Price

$0.024

Lifecycle Status

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22

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1k+

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DigiKey

USA . 20,871 parts In-Stock

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$0.150

100+ parts

$0.055

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$0.035

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$0.024

20,871

$0.150

$0.055

$0.035

$0.024

Mouser Electronics

USA . 12,357 parts In-Stock

1+ parts

$0.150

100+ parts

$0.054

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$0.034

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$0.028

12,357

$0.150

$0.054

$0.034

$0.028

Rochester

USA . 496,160 parts In-Stock

1+ parts

-

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$0.018

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$0.015

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$0.013

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$0.018

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$0.013

Verical

USA . 286,000 parts In-Stock

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EBV Elektronik

Germany . 150,000 parts In-Stock

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Arrow

USA . 123,000 parts In-Stock

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$0.021

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Avnet

USA . 90,000 parts In-Stock

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Chip1Stop

Japan . 33,000 parts In-Stock

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$0.027

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$0.027

Future Electronics

Canada . 15,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 3,000 parts In-Stock

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Digiode

USA . 1,541 parts In-Stock

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$0.024

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Nova Conductors

Japan . 500 parts In-Stock

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$0.031

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Vyrian

USA . 129,173 parts In-Stock

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IBS Electronics

USA . 72,000 parts In-Stock

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NAC Semi

USA . 33,000 parts In-Stock

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$0.039

33,000

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ComSIT Distribution GmbH

Germany . 23,562 parts In-Stock

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Bristol Electronics

USA . 5,230 parts In-Stock

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Atlantic Semiconductor

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Flip Electronics

USA . 3,000 parts In-Stock

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Velocity Electronics

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A&K Electronics

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Rotakorn

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Ampacity Inc.

Singapore . 129,273 parts In-Stock

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$0.013

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Corohmni

South Africa . 323 parts In-Stock

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Corphita

USA . 1,159 parts In-Stock

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Argo Parts USA

USA . 2,897 parts In-Stock

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Aztec Data Supply Inc.

USA . 268 parts In-Stock

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$1.536

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268

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Authorized Procurement Solutions

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Perfect Parts

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Continental Prestige Electronics

USA . 495,200 parts In-Stock

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GreenTree Electronics

Israel . 204,000 parts In-Stock

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Eastek

USA . 186,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,468 parts In-Stock

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Metaverse IC Inc.

Canada . 22,990 parts In-Stock

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Problanco Electronics

Mexico . 7,513 parts In-Stock

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SupplyDigital Components

Austria . 7,189 parts In-Stock

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Kulean Microsystems

USA . 6,168 parts In-Stock

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TANS Electronics

Latvia . 2,094 parts In-Stock

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Lixinc

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Kepictronics

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UHIMA Technologies

Türkiye . 726 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Overview

Enhance your electronics projects with the MMUN2132LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this PNP transistor offers superior performance and reliability. Its single configuration with built-in resistor makes it easy to use, while its small outline package and gull wing terminals allow for convenient surface mounting. Whether you're a hobbyist or a professional, this transistor's high power dissipation, wide operating temperature range, and impressive collector-emitter voltage make it a valuable addition to your toolkit. Choose the MMUN2132LT1G for unmatched quality and performance in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this product versatile and functional.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and secure installation on circuit boards, enhancing reliability and ease of assembly.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and stability, ensuring secure connections in the circuit.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle moderate power levels without overheating or damage.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain of 15 ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, making it suitable for use in a wide range of environments.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating allows for the handling of higher voltages, making it versatile for various applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling a maximum collector current of 0.1A, ensuring reliable performance in low to moderate current applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections and longevity of the product.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, allowing for efficient and reliable soldering during assembly.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of up to 260°C, ensuring proper soldering and reliability in assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2132LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2132LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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