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MMUN2235LT1G

Onsemi

MMUN2235LT1G by Onsemi

MMUN2235LT1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is ideal for surface mount designs requiring low power dissipation.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 66,000 parts In-Stock

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$0.017

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$0.017

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DigiKey

USA . 4,095 parts In-Stock

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$0.170

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$0.063

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$0.040

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$0.028

4,095

$0.170

$0.063

$0.040

$0.028

EBV Elektronik

Germany . 1,884,000 parts In-Stock

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Future Electronics

Canada . 108,000 parts In-Stock

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RS (Exports)

UK . 42,000 parts In-Stock

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Arrow

USA . 39,000 parts In-Stock

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$0.023

39,000

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Farnell

UK . 34,911 parts In-Stock

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$0.053

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$0.038

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$0.033

34,911

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$0.053

$0.038

$0.033

Element14

Singapore . 34,591 parts In-Stock

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$0.086

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$0.055

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$0.054

34,591

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$0.086

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$0.054

Verical

USA . 23,500 parts In-Stock

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Chip1Stop

Japan . 21,000 parts In-Stock

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Rochester

USA . 7,955 parts In-Stock

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$0.020

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$0.015

7,955

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$0.015

Distributors (In-Stock)

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Digiode

USA . 228 parts In-Stock

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$0.024

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228

$0.024

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Nova Conductors

Japan . 10 parts In-Stock

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$0.031

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10

$0.031

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TME

Poland . 89 parts In-Stock

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$0.150

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$0.063

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$0.037

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$0.026

89

$0.150

$0.063

$0.037

$0.026

IBS Electronics

USA . 2,529,000 parts In-Stock

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2,529,000

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NAC Semi

USA . 87,000 parts In-Stock

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Chip Stock

USA . 64,986 parts In-Stock

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Flip Electronics

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Vyrian

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ComSIT Distribution GmbH

Germany . 495 parts In-Stock

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495

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A&K Electronics

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Rotakorn

Sweden . 295 parts In-Stock

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Bristol Electronics

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Distributors (Availability)

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Corohmni

South Africa . 444 parts In-Stock

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$0.016

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444

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Ampacity Inc.

Singapore . 22,603 parts In-Stock

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$0.021

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Corphita

USA . 843 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 291 parts In-Stock

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291

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Continental Prestige Electronics

USA . 16,775 parts In-Stock

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$0.121

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$0.059

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Aztec Data Supply Inc.

USA . 199 parts In-Stock

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$1.478

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RC Electronics

USA . 133,720 parts In-Stock

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Eastek

USA . 54,000 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

USA . 15,792 parts In-Stock

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Lixinc

USA . 5,973 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,933 parts In-Stock

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SupplyDigital Components

Austria . 4,389 parts In-Stock

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Problanco Electronics

Mexico . 3,629 parts In-Stock

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UHIMA Technologies

Türkiye . 904 parts In-Stock

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TANS Electronics

Latvia . 428 parts In-Stock

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Kulean Microsystems

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Overview

Looking for a reliable solution for your switching applications? Look no further than the MMUN2235LT1G from Onsemi, a leading manufacturer known for top-quality components. This Small Signal Bipolar Junction Transistor (BJT) offers superior performance and durability with its NPN polarity and built-in resistor configuration. Perfect for surface mount applications, this transistor provides a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A. Trust Onsemi to deliver value and innovation with every product, including the MMUN2235LT1G. Elevate your projects with this high-quality transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering versatility.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space on the PCB by integrating a resistor within the transistor package.

Transistor Application: SWITCHING

Optimized for high-speed switching applications, making it suitable for various electronic designs.

Surface Mount: YES

Facilitates easy and efficient PCB assembly with surface mounting capabilities.

Package Shape: RECTANGULAR

Simplifies PCB layout and design, allowing for organized component placement.

Terminal Form: GULL WING

Enables easy soldering and secure terminal connection for reliable performance.

Package Style (Meter): SMALL OUTLINE

Compact design saves space on the PCB while enhancing overall circuit efficiency.

Minimum DC Current Gain (hFE): 80

Ensures consistent and reliable performance in amplification applications.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage requirements for various electronic circuits.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability for electronic applications.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current loads, making it suitable for a range of circuit designs.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a stable and reliable terminal finish for secure soldering connections.

Terminal Position: DUAL

Dual terminal position offers flexibility for PCB layout and circuit design.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2235LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2235LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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