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MMUN2212LT1G

Onsemi

MMUN2212LT1G by Onsemi

MMUN2212LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 60 (hFE). The transistor is in a small outline package suitable for surface mount technology.

Median Price

$0.073

Lifecycle Status

Suppliers In-Stock

30

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 38,913 parts In-Stock

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$0.140

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$0.054

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38,913

$0.140

$0.054

$0.034

$0.022

DigiKey

USA . 37,976 parts In-Stock

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$0.053

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$0.034

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Newark

USA . 63,995 parts In-Stock

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EBV Elektronik

Germany . 4,332,000 parts In-Stock

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Rochester

USA . 549,767 parts In-Stock

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Verical

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Farnell

UK . 74,520 parts In-Stock

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Element14

Singapore . 74,520 parts In-Stock

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Flip Electronics (Authorized)

USA . 14,335 parts In-Stock

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Digiode

USA . 2,160 parts In-Stock

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Nova Conductors

Japan . 17 parts In-Stock

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Bristol Electronics

USA . 23,147 parts In-Stock

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TME

Poland . 2,715 parts In-Stock

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Maritex

Poland . 39,897 parts In-Stock

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NAC Semi

USA . 3,483,000 parts In-Stock

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Vyrian

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Sensible Micro Corp

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Rebound Electronics

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Semicontronic

India . 262,464 parts In-Stock

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Ampacity Inc.

Singapore . 244,913 parts In-Stock

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Corohmni

South Africa . 135 parts In-Stock

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Corphita

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Argo Parts USA

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Bastille Electronics

Australia . 10 parts In-Stock

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Advanced Electronics

New Zealand . 270 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,642 parts In-Stock

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Andel Nordic

Denmark . 1,771 parts In-Stock

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Eastek

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Perfect Parts

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Continental Prestige Electronics

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CPlus Electronics

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RC Electronics

USA . 137,478 parts In-Stock

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Component Connect

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Israel . 39,000 parts In-Stock

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Metaverse IC Inc.

Canada . 30,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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UK . 5,033 parts In-Stock

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Problanco Electronics

Mexico . 4,887 parts In-Stock

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SupplyDigital Components

Austria . 3,807 parts In-Stock

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Infinite Electronics LLP (Excess)

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Latvia . 376 parts In-Stock

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UHIMA Technologies

Türkiye . 131 parts In-Stock

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Overview

Enhance your electronic designs with the MMUN2212LT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor (BJT) that boasts reliability and performance. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is perfect for switching applications. With its compact size, built-in resistor, and maximum power dissipation of 0.2W, this transistor offers exceptional value and versatility. Whether you're working on consumer electronics or industrial equipment, the MMUN2212LT1G delivers outstanding results every time. Trust Onsemi to provide top-notch components for all your design needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering high efficiency and good performance.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components, making integration easier.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and reliable performance in a compact package.

Surface Mount: YES

The surface mount design allows for easy and efficient PCB assembly, saving time and reducing production costs.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact and space-saving solution for circuit board layout.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 60

A high minimum DC current gain of 60 ensures consistent and reliable amplification performance in various circuit applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, ensuring long-term reliability.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating of 50V makes this transistor suitable for a wide range of voltage applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor can handle moderate current levels, making it suitable for various switching tasks.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and conductivity, ensuring reliable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 40

The 40-second maximum time at peak reflow temperature ensures proper reflow soldering, resulting in consistent and reliable solder joints.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C allows for efficient soldering of the transistor on the PCB, ensuring proper electrical connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2212LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2212LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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