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MMUN2114LT3G

Onsemi

MMUN2114LT3G by Onsemi

MMUN2114LT3G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). With a package style of small outline, it operates up to 150°C and comes in a surface mount rectangular shape with gull wing terminals.

Median Price

$0.150

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 18,439 parts In-Stock

1+ parts

$0.150

100+ parts

$0.055

1k+ parts

$0.031

10k+ parts

$0.023

18,439

$0.150

$0.055

$0.031

$0.023

DigiKey

USA . 17,012 parts In-Stock

1+ parts

$0.150

100+ parts

$0.055

1k+ parts

$0.035

10k+ parts

$0.023

17,012

$0.150

$0.055

$0.035

$0.023

EBV Elektronik

Germany . 10,000 parts In-Stock

1+ parts

-

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10,000

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Distributors (In-Stock)

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Digiode

USA . 940 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

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940

$0.024

-

-

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Vyrian

USA . 2,054 parts In-Stock

1+ parts

$0.025

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2,054

$0.025

-

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NAC Semi

USA . 10,000 parts In-Stock

1+ parts

-

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10k+ parts

$0.076

10,000

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-

-

$0.076

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 688 parts In-Stock

1+ parts

$0.022

100+ parts

-

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688

$0.022

-

-

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Corohmni

South Africa . 441 parts In-Stock

1+ parts

$0.025

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441

$0.025

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Kepictronics

USA . 50,000 parts In-Stock

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50,000

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Eastek

USA . 30,000 parts In-Stock

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30,000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 6,992 parts In-Stock

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6,992

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Kulean Microsystems

USA . 4,884 parts In-Stock

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4,884

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TANS Electronics

Latvia . 2,607 parts In-Stock

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2,607

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SupplyDigital Components

Austria . 1,037 parts In-Stock

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1,037

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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382

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Overview

Enhance your electronic projects with the MMUN2114LT3G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP transistor is perfect for switching applications and comes in a convenient surface-mount package. With a built-in resistor and high DC current gain, this transistor offers exceptional performance and reliability. Explore the endless possibilities of electronics with the MMUN2114LT3G and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit configurations.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by incorporating a resistor within the transistor package.

Transistor Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Surface Mount: YES

Enables easy and convenient surface mounting on PCBs.

Package Shape: RECTANGULAR

Facilitates compact and space-saving PCB layouts.

Terminal Form: GULL WING

Allows for easy soldering and reliable connection.

Maximum Power Dissipation (Abs): 0.4 W

Handles moderate power dissipation, suitable for many applications.

Minimum DC Current Gain (hFE): 80

Provides good amplification capabilities for signal processing.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures, offering versatility in different environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring up to 50 volts in collector-emitter voltage.

Transistor Element Material: SILICON

Features silicon material known for its reliability and performance in transistors.

Maximum Collector Current (IC): 0.1 A

Capable of handling current up to 0.1 amperes, suitable for various low-power applications.

Terminal Finish: Matte Tin (Sn) - annealed

Provides a reliable terminal finish for long-term performance.

Terminal Position: DUAL

Offers flexibility in PCB layout and connection options.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2114LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 0.21

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2114LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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