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MMUN2112LT1G

Onsemi

MMUN2112LT1G by Onsemi

MMUN2112LT1G by Onsemi is a PNP BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 60. This small outline transistor operates up to 150°C and comes in a surface-mount rectangular package with gull wing terminals.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 8,395 parts In-Stock

1+ parts

$0.165

100+ parts

$0.062

1k+ parts

$0.039

10k+ parts

-

8,395

$0.165

$0.062

$0.039

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DigiKey

USA . 50,572 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

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50,572

$0.170

$0.063

$0.040

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Mouser Electronics

USA . 17,481 parts In-Stock

1+ parts

$0.170

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$0.063

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$0.040

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$0.030

17,481

$0.170

$0.063

$0.040

$0.030

Flip Electronics (Authorized)

USA . 1,776,000 parts In-Stock

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1,776,000

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Rochester

USA . 181,517 parts In-Stock

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$0.020

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$0.017

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$0.015

181,517

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$0.020

$0.017

$0.015

Arrow

USA . 99,000 parts In-Stock

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$0.028

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$0.028

Verical

USA . 99,000 parts In-Stock

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$0.028

99,000

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$0.028

Farnell

UK . 8,550 parts In-Stock

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-

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$0.052

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$0.037

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$0.033

8,550

-

$0.052

$0.037

$0.033

Element14

Singapore . 8,550 parts In-Stock

1+ parts

-

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$0.056

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$0.055

8,550

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$0.056

$0.055

Chip1Stop

Japan . 106 parts In-Stock

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$0.027

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106

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$0.027

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Distributors (In-Stock)

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Digiode

USA . 376 parts In-Stock

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$0.024

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376

$0.024

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DF Sales Co.

USA . 7,440 parts In-Stock

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$0.028

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7,440

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DF Sales Co.

USA . 7,440 parts In-Stock

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$0.028

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7,440

$0.028

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Nova Conductors

Japan . 52 parts In-Stock

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$0.028

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52

$0.028

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Bristol Electronics

USA . 17,799 parts In-Stock

1+ parts

$0.087

100+ parts

$0.043

1k+ parts

$0.017

10k+ parts

$0.011

17,799

$0.087

$0.043

$0.017

$0.011

TME

Poland . 365 parts In-Stock

1+ parts

$0.110

100+ parts

$0.054

1k+ parts

$0.036

10k+ parts

$0.027

365

$0.110

$0.054

$0.036

$0.027

Flip Electronics

USA . 936,000 parts In-Stock

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936,000

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Vyrian

USA . 190,349 parts In-Stock

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Chip Stock

USA . 41,000 parts In-Stock

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Dan-Mar Components

USA . 17,799 parts In-Stock

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17,799

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ACDS - Activité Composants Distribution Service

France . 15,000 parts In-Stock

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ABC Electronics Ltd.

UK . 8,500 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.071

6,000

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$0.071

Tectiva GmbH

Germany . 3,250 parts In-Stock

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3,250

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Inventory MP

USA . 2,494 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,935 parts In-Stock

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1,935

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Distributors (Availability)

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Corohmni

South Africa . 224 parts In-Stock

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$0.017

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224

$0.017

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Semicontronic

India . 189,312 parts In-Stock

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$0.021

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189,312

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Ampacity Inc.

Singapore . 189,116 parts In-Stock

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Corphita

USA . 92 parts In-Stock

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92

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Argo Parts USA

USA . 2,024 parts In-Stock

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2,024

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$0.028

Component Stockers USA

USA . 478,609 parts In-Stock

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$0.020

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$0.020

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$0.010

478,609

$0.030

$0.020

$0.020

$0.010

Aztec Data Supply Inc.

USA . 144 parts In-Stock

1+ parts

$1.207

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144

$1.207

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Advanced Electronics

New Zealand . 87 parts In-Stock

1+ parts

$1.271

100+ parts

$1.157

1k+ parts

$1.042

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87

$1.271

$1.157

$1.042

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Perfect Parts

USA . 795,222 parts In-Stock

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795,222

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Continental Prestige Electronics

USA . 181,517 parts In-Stock

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$0.014

181,517

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$0.014

Eastek

USA . 39,000 parts In-Stock

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39,000

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GreenTree Electronics

Israel . 39,000 parts In-Stock

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Authorized Procurement Solutions

USA . 36,000 parts In-Stock

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36,000

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S.R.D Solutions

India . 20,000 parts In-Stock

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Lixinc

USA . 16,063 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,476 parts In-Stock

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Futuretech Components

Singapore . 10,000 parts In-Stock

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TANS Electronics

Latvia . 7,963 parts In-Stock

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Problanco Electronics

Mexico . 5,251 parts In-Stock

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SupplyDigital Components

Austria . 3,851 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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Kepictronics

USA . 2,600 parts In-Stock

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UHIMA Technologies

Türkiye . 948 parts In-Stock

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948

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Netroflash

USA . 500 parts In-Stock

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$0.028

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500

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Kulean Microsystems

USA . 124 parts In-Stock

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124

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Overview

Enhance your electronic projects with the MMUN2112LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by industry leader Onsemi, this PNP transistor offers unparalleled reliability and performance. With a single configuration and built-in resistor, this surface-mount transistor is perfect for a wide range of applications. Experience the value and benefits of this product, from its high DC current gain to its maximum collector-emitter voltage of 50V. Upgrade your projects today with the MMUN2112LT1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching applications, offering versatility in circuit design.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Saves space and simplifies circuit design by integrating a resistor into the transistor package.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, especially in modern electronics manufacturing processes.

Package Shape: RECTANGULAR

A common package shape that allows for easy placement and alignment on the PCB.

Terminal Form: GULL WING

Enhances solder joint reliability and provides mechanical strength during PCB assembly.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in PCB layout.

Maximum Power Dissipation (Abs): 0.2 W

Can handle a respectable power dissipation, suitable for various low-power applications.

Package Style (Meter): SMALL OUTLINE

Compact package size saves space on the PCB and allows for high-density mounting.

Minimum DC Current Gain (hFE): 60

Ensures stable and consistent transistor amplification in a circuit.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures, expanding the range of potential applications.

Maximum Collector-Emitter Voltage: 50 V

Handles moderate voltage levels, suitable for many common electronic circuits.

Transistor Element Material: SILICON

Provides good performance characteristics and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

Sufficient current handling capability for low-power switching applications.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Allows for easy and secure connection in the circuit layout.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand reflow soldering processes without compromising performance.

Peak Reflow Temperature °C: 260

Can endure high-temperature soldering processes, ensuring robust assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMUN2112LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

MMUN2112LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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