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NSVB144EPDXV6T1G

Onsemi

NSVB144EPDXV6T1G by Onsemi

NSVB144EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. Featuring 2 elements, it offers max power dissipation of 0.5W, min hFE of 80, and max IC of 0.1A. Commonly used in low-power electronic circuits due to its silicon transistor element material.

Median Price

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Lifecycle Status

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3

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1k+

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USA . 22,000 parts In-Stock

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USA . 9,341 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 856 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,545 parts In-Stock

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Problanco Electronics

Mexico . 3,898 parts In-Stock

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SupplyDigital Components

Austria . 2,239 parts In-Stock

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TANS Electronics

Latvia . 1,633 parts In-Stock

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Corphita

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Kulean Microsystems

USA . 1,281 parts In-Stock

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UHIMA Technologies

Türkiye . 801 parts In-Stock

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Corohmni

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Overview

Explore the limitless possibilities with the NSVB144EPDXV6T1G by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers both NPN and PNP polarity options, making it versatile for a range of applications. With a maximum power dissipation of 0.5W and a minimum DC current gain of 80, this transistor ensures efficient performance. Whether you're in the automotive industry or designing consumer electronics, this product guarantees reliability and quality. Elevate your projects with the NSVB144EPDXV6T1G and experience the difference that Onsemi's superior technology brings to the table.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers both NPN and PNP options, providing flexibility for different circuit designs.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly.

No. of Elements: 2

Having 2 elements provides redundancy and ensures better performance and reliability.

Maximum Power Dissipation (Abs): 0.5 W

The high maximum power dissipation allows for handling higher power loads without overheating.

Minimum DC Current Gain (hFE): 80

The minimum DC current gain of 80 ensures stable and consistent amplification in various applications.

Transistor Element Material: SILICON

Silicon transistors offer better performance and durability compared to other materials.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current allows for handling higher current loads, making it suitable for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSVB144EPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

80

No. of Elements:

2

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON

Trade Compliance

NSVB144EPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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