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DTA144TET1G

Onsemi

DTA144TET1G by Onsemi

DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.

Median Price

$0.024

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$0.024

1k+ parts

$0.020

10k+ parts

$0.018

3,000

-

$0.024

$0.020

$0.018

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 612 parts In-Stock

1+ parts

$0.024

100+ parts

-

1k+ parts

-

10k+ parts

-

612

$0.024

-

-

-

Chip Stock

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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-

18,000

-

-

-

-

Vyrian

USA . 10,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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10,685

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,909 parts In-Stock

1+ parts

$0.021

100+ parts

-

1k+ parts

-

10k+ parts

-

2,909

$0.021

-

-

-

Corphita

USA . 1,348 parts In-Stock

1+ parts

$0.022

100+ parts

-

1k+ parts

-

10k+ parts

-

1,348

$0.022

-

-

-

Corohmni

South Africa . 489 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

489

$0.025

-

-

-

Component Stockers USA

USA . 2,204 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

-

2,204

$0.030

$0.020

$0.020

-

Native Components

USA . 562 parts In-Stock

1+ parts

$0.425

100+ parts

-

1k+ parts

-

10k+ parts

$0.408

562

$0.425

-

-

$0.408

Northwest PG Solutions

USA . 1,638 parts In-Stock

1+ parts

$0.468

100+ parts

-

1k+ parts

-

10k+ parts

$0.412

1,638

$0.468

-

-

$0.412

AZTECH Wire

Italy . 1,066 parts In-Stock

1+ parts

$18.440

100+ parts

-

1k+ parts

-

10k+ parts

-

1,066

$18.440

-

-

-

Kulean Microsystems

USA . 6,248 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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6,248

-

-

-

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SupplyDigital Components

Austria . 6,113 parts In-Stock

1+ parts

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100+ parts

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6,113

-

-

-

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Problanco Electronics

Mexico . 5,095 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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5,095

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-

-

-

TANS Electronics

Latvia . 1,054 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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1,054

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-

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UHIMA Technologies

Türkiye . 982 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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982

-

-

-

-

Overview

Enhance your electronic projects with the DTA144TET1G by Onsemi. As a leading manufacturer in small signal bipolar junction transistors, Onsemi guarantees top-notch quality and reliability. This PNP transistor with a built-in resistor is ideal for switching applications, offering seamless performance and efficiency. With its compact design and high power dissipation, this transistor provides exceptional value for your projects. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and mechanical protection, making the transistor durable and reliable.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching configurations and can handle higher voltages, making them suitable for a wide range of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it ideal for compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can quickly turn on and off, making it efficient and suitable for applications requiring rapid switching.

Surface Mount: YES

Being surface mountable allows for easy and automated PCB assembly, reducing manufacturing costs and improving overall reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to handle and mount on the PCB, ensuring proper alignment and placement during assembly.

Terminal Form: GULL WING

The gull wing terminals provide a strong mechanical connection and make it easier to solder the transistor to the PCB, improving overall reliability.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Minimum DC Current Gain (hFE): 120

A high DC current gain ensures that the transistor can amplify small signals effectively, making it suitable for various signal amplification applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle higher voltages without breakdown, making it suitable for applications requiring voltage amplification or switching.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, ensuring consistent performance over a wide range of temperatures and operating conditions.

Maximum Collector Current (IC): 0.1 A

With a high maximum collector current rating, this transistor can handle relatively high currents, making it suitable for applications requiring power switching or amplification.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection and long-term performance.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in circuit design and allows for easy integration into various electronic devices, making it a versatile choice for different applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA144TET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

120

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA144TET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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