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SMUN5315DW1T1G

Onsemi

SMUN5315DW1T1G by Onsemi

SMUN5315DW1T1G by Onsemi is a dual NPN and PNP BJT with 2 elements. Features include max power dissipation of 0.256W, min DC current gain of 160, and max collector current of 0.1A. Ideal for surface mount applications in electronics requiring high performance transistors.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 332 parts In-Stock

1+ parts

$0.280

100+ parts

$0.107

1k+ parts

$0.070

10k+ parts

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332

$0.280

$0.107

$0.070

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Rochester

USA . 158,973 parts In-Stock

1+ parts

-

100+ parts

$0.042

1k+ parts

$0.035

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$0.031

158,973

-

$0.042

$0.035

$0.031

Flip Electronics (Authorized)

USA . 96,000 parts In-Stock

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Verical

USA . 90,900 parts In-Stock

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$0.039

90,900

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$0.039

Newark

USA . 18,000 parts In-Stock

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$0.055

18,000

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$0.055

Distributors (In-Stock)

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Digiode

USA . 2,390 parts In-Stock

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$0.033

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2,390

$0.033

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Flip Electronics

USA . 96,000 parts In-Stock

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96,000

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Chip Stock

USA . 43,000 parts In-Stock

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43,000

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Vyrian

USA . 6,081 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,399 parts In-Stock

1+ parts

$0.032

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2,399

$0.032

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Corohmni

South Africa . 127 parts In-Stock

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$0.035

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127

$0.035

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Continental Prestige Electronics

USA . 169,400 parts In-Stock

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$0.112

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169,400

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$0.112

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QUARKTWIN TECHNOLOGY LTD

USA . 24,480 parts In-Stock

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24,480

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Problanco Electronics

Mexico . 5,068 parts In-Stock

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SupplyDigital Components

Austria . 3,181 parts In-Stock

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Kulean Microsystems

USA . 1,546 parts In-Stock

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1,546

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TANS Electronics

Latvia . 1,073 parts In-Stock

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1,073

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UHIMA Technologies

Türkiye . 399 parts In-Stock

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399

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Overview

Unleash the power of small signal Bipolar Junction Transistors with the SMUN5315DW1T1G by Onsemi. This innovative product offers quality and reliability, backed by Onsemi's reputation for excellence. Ideal for a wide range of applications, this NPN and PNP transistor is designed for surface mount use, making it versatile and easy to integrate into your projects. With a maximum collector current of 0.1 A and a minimum DC current gain of 160, this transistor delivers exceptional performance. Experience the value and benefits of the SMUN5315DW1T1G and take your projects to the next level with Onsemi.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

This product offers both NPN and PNP options, providing flexibility in circuit design.

Surface Mount: YES

Makes it suitable for automated assembly processes, saving time and ensuring precision.

No. of Elements: 2

Having two elements allows for more complex circuit configurations and applications.

Maximum Power Dissipation (Abs): 0.256 W

This transistor can handle relatively high power dissipation, making it suitable for various applications.

Minimum DC Current Gain (hFE): 160

With a high minimum DC current gain, this transistor provides consistent amplification in circuits.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance, making this transistor a durable choice.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in circuits.

Terminal Finish: MATTE TIN

Matte tin finish ensures good solderability and reliable connections in circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, suitable for reflow soldering processes.

Peak Reflow Temperature °C: 260

Can withstand peak reflow temperatures of up to 260 °C, ensuring reliable solder joints during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMUN5315DW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

160

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SMUN5315DW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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