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MCH6542-TL-E

Onsemi

MCH6542-TL-E by Onsemi

MCH6542-TL-E by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.55W, min hFE of 300, and max IC of 0.3A, it operates up to 150 °C. Ideal for surface mount applications with Tin/Bismuth finish, this transistor suits various electronic designs.

Median Price

$0.304

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

$0.304

1k+ parts

$0.252

10k+ parts

$0.225

84,000

-

$0.304

$0.252

$0.225

DigiKey

USA . 84,000 parts In-Stock

1+ parts

-

100+ parts

-

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$0.380

10k+ parts

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84,000

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-

$0.380

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Verical

USA . 51,000 parts In-Stock

1+ parts

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$0.281

51,000

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-

-

$0.281

Distributors (In-Stock)

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Digiode

USA . 2,050 parts In-Stock

1+ parts

$0.237

100+ parts

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2,050

$0.237

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-

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Chip Stock

USA . 61,000 parts In-Stock

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61,000

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Vyrian

USA . 3,985 parts In-Stock

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3,985

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Distributors (Availability)

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Corphita

USA . 1,906 parts In-Stock

1+ parts

$0.224

100+ parts

-

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1,906

$0.224

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Corohmni

South Africa . 73 parts In-Stock

1+ parts

$0.227

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73

$0.227

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AZTECH Wire

Italy . 1,201 parts In-Stock

1+ parts

$14.010

100+ parts

-

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1,201

$14.010

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Continental Prestige Electronics

USA . 84,000 parts In-Stock

1+ parts

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100+ parts

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$0.255

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84,000

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$0.255

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QUARKTWIN TECHNOLOGY LTD

USA . 8,395 parts In-Stock

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8,395

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Kulean Microsystems

USA . 4,954 parts In-Stock

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4,954

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SupplyDigital Components

Austria . 1,869 parts In-Stock

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1,869

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Problanco Electronics

Mexico . 734 parts In-Stock

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734

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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95

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TANS Electronics

Latvia . 50 parts In-Stock

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50

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Overview

Unlock the power of innovation with the MCH6542-TL-E Small Signal Bipolar Junction Transistor from Onsemi. With both NPN and PNP options, this surface mount transistor offers maximum power dissipation of 0.55W and a minimum DC current gain of 300. Ideal for a wide range of applications, this high-quality component ensures reliable performance in various electronic circuits. Trust Onsemi's expertise and invest in the MCH6542-TL-E for unmatched value and benefits in your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types available allows for flexibility in circuit design and compatibility with various configurations.

Surface Mount: YES

The surface mount capability simplifies the assembly process and saves space on the PCB, making it suitable for compact designs.

Maximum Power Dissipation (Abs): 0.55 W

With a relatively high maximum power dissipation, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 300

A high minimum DC current gain ensures consistent and stable amplification performance in various applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for operation in a wide range of environments without compromising performance.

Maximum Collector Current (IC): 0.3 A

The maximum collector current rating of 0.3 A makes this transistor suitable for low to moderate current applications, providing a good balance between power handling and efficiency.

Terminal Finish: Tin/Bismuth (Sn/Bi)

The tin/bismuth terminal finish offers good solderability and reliability, ensuring secure connections and longevity in operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6542-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

300

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Trade Compliance

MCH6542-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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