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MCH6536-TL-E

Onsemi

MCH6536-TL-E by Onsemi

MCH6536-TL-E by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 separate elements in a rectangular package with 6 terminals. With a hFE of 300, Vce(max) of 15V, and IC(max) of 0.7A, it offers high performance in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 860 parts In-Stock

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Digiode

USA . 661 parts In-Stock

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Component Stockers USA

USA . 573 parts In-Stock

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$99.990

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Kepictronics

USA . 5,447 parts In-Stock

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Kulean Microsystems

USA . 4,330 parts In-Stock

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TANS Electronics

Latvia . 3,804 parts In-Stock

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Problanco Electronics

Mexico . 2,621 parts In-Stock

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SupplyDigital Components

Austria . 2,258 parts In-Stock

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UHIMA Technologies

Türkiye . 965 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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Corphita

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Overview

Experience the superior performance and reliability of Onsemi's MCH6536-TL-E Small Signal Bipolar Junction Transistor. With a focus on quality and innovation, Onsemi delivers cutting-edge technology in a compact package ideal for switching applications. This NPN and PNP transistor offers customers seamless integration with its dual element configuration and high DC current gain. Trust Onsemi to provide you with the value and benefits you need in a transistor, ensuring your projects are powered with efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for more flexibility in circuit design and application compatibility.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in these scenarios.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and effort during manufacturing.

Minimum DC Current Gain (hFE): 300

High DC current gain ensures consistent and stable amplification in various circuit configurations.

Maximum Collector-Emitter Voltage: 15 V

With a maximum voltage of 15V, this transistor can handle a wide range of voltage levels, making it versatile in different applications.

Nominal Transition Frequency (fT): 330 MHz

High transition frequency allows for faster switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6536-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH6536-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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