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MCH6536

Onsemi

MCH6536 by Onsemi

The Onsemi MCH6536 is a Small Signal BJT available in NPN and PNP types, with hFE of 300. It has a max power dissipation of 0.55W, max collector current of 0.5A, and operates up to 150 °C. Ideal for various electronic applications requiring high gain transistors in surface mount packages.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,273 parts In-Stock

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Digiode

USA . 1,806 parts In-Stock

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1,806

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Distributors (Availability)

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TANS Electronics

Latvia . 8,161 parts In-Stock

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Problanco Electronics

Mexico . 7,897 parts In-Stock

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SupplyDigital Components

Austria . 6,474 parts In-Stock

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Kulean Microsystems

USA . 6,460 parts In-Stock

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Corphita

USA . 692 parts In-Stock

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Corohmni

South Africa . 419 parts In-Stock

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UHIMA Technologies

Türkiye . 320 parts In-Stock

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Overview

Experience the superior quality and reliability of the MCH6536 by Onsemi, a leading manufacturer in the industry. Ideal for a wide range of applications, this small signal bipolar junction transistor (BJT) offers both NPN and PNP polarity options, making it versatile and efficient. With a maximum power dissipation of 0.55W and a minimum DC current gain of 300, this transistor can handle a variety of tasks with ease. Trust in Onsemi's reputation for excellence and innovation as you discover the value and benefits that the MCH6536 brings to your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN AND PNP

Provides versatility for use in a wide range of applications.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly.

Maximum Power Dissipation (Abs): 0.55 W

Ensures the transistor can handle moderate power levels, making it suitable for various tasks without overheating.

Minimum DC Current Gain (hFE): 300

Guarantees stable and consistent amplification of signals, essential for reliable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, ideal for applications where heat dissipation is a concern.

Maximum Collector Current (IC): 0.5 A

Can handle relatively high collector currents, making it suitable for moderate power applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6536 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

300

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

MCH6536 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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