Loading...

MCH6101-TL-E

Onsemi

MCH6101-TL-E by Onsemi

MCH6101-TL-E by Onsemi is a PNP BJT transistor for switching applications. It has hFE of 200, Vce(max) of 15V, and fT of 430MHz. With SMD package style and COLLECTOR connection, it's ideal for high-speed electronic circuits requiring fast switching capabilities.

Median Price

$0.089

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 315,716 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.071

315,716

-

-

-

$0.071

Rochester

USA . 279,719 parts In-Stock

1+ parts

-

100+ parts

$0.096

1k+ parts

$0.080

10k+ parts

$0.071

279,719

-

$0.096

$0.080

$0.071

Verical

USA . 212,845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.089

212,845

-

-

-

$0.089

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,306 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

1,306

$0.071

-

-

-

Digiode

USA . 452 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

-

10k+ parts

-

452

$0.083

-

-

-

Chip Stock

USA . 3,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,610

-

-

-

-

Semi Source

USA . 76 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

76

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 384 parts In-Stock

1+ parts

$0.071

100+ parts

-

1k+ parts

-

10k+ parts

-

384

$0.071

-

-

-

Corphita

USA . 1,521 parts In-Stock

1+ parts

$0.078

100+ parts

-

1k+ parts

-

10k+ parts

-

1,521

$0.078

-

-

-

Continental Prestige Electronics

USA . 255,931 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.071

10k+ parts

-

255,931

-

-

$0.071

-

ChipstoGo Electronic ltd

UK . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Authorized Procurement Solutions

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 9,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,107

-

-

-

-

SupplyDigital Components

Austria . 5,402 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,402

-

-

-

-

Problanco Electronics

Mexico . 4,913 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,913

-

-

-

-

TANS Electronics

Latvia . 4,535 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,535

-

-

-

-

Kepictronics

USA . 2,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,350

-

-

-

-

Metaverse IC Inc.

Canada . 2,350 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,350

-

-

-

-

Perfect Parts

USA . 2,215 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,215

-

-

-

-

Kulean Microsystems

USA . 1,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,635

-

-

-

-

Assy Fe

Spain . 1,610 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,610

-

-

-

-

UHIMA Technologies

Türkiye . 585 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

585

-

-

-

-

Overview

Unleash the power of innovation with the MCH6101-TL-E by Onsemi, a top-tier manufacturer known for quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, offering seamless performance and unmatched durability. With a maximum collector-emitter voltage of 15V and a nominal transition frequency of 430 MHz, this PNP transistor is a game-changer in the industry. Elevate your projects with the MCH6101-TL-E and experience the difference in efficiency and effectiveness.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design with a single transistor, reducing complexity and potential points of failure.

Transistor Application: SWITCHING

Designed for efficient switching applications, ensuring fast response times and minimal power loss.

Surface Mount: YES

Allows for easy and secure surface mounting, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Provides a sleek and compact form factor, ideal for space-constrained applications.

Terminal Form: FLAT

Ensures a reliable and stable connection, reducing the risk of signal loss or interference.

No. of Terminals: 6

Offers versatile connection options, accommodating various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Facilitates easy integration into densely populated circuits, improving overall system efficiency.

Minimum DC Current Gain (hFE): 200

Provides consistent and reliable amplification of current signals, ensuring signal integrity.

Maximum Collector-Emitter Voltage: 15 V

Can handle high voltage levels, allowing for versatile applications in different voltage scenarios.

Transistor Element Material: SILICON

Offers high performance and reliability, with excellent thermal properties for efficient heat dissipation.

Maximum Turn On Time (ton): 30 ns

Enables fast turn-on times, crucial for switching applications requiring rapid response.

Maximum Collector Current (IC): 1.5 A

Supports high current loads, suitable for applications requiring robust current handling capabilities.

Maximum Turn Off Time (toff): 102 ns

Ensures quick turn-off times, reducing the risk of power loss and improving overall efficiency.

Terminal Position: DUAL

Provides dual terminal positions for increased flexibility in circuit design and connectivity.

Case Connection: COLLECTOR

Easily accessible collector connection for efficient circuit integration and signal routing.

Nominal Transition Frequency (fT): 430 MHz

High frequency capability for fast signal processing and switching operations, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6101-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

102 ns

Maximum Turn On Time (ton):

30 ns

Trade Compliance

MCH6101-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20