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MCH6541-TL-E

Onsemi

MCH6541-TL-E by Onsemi

MCH6541-TL-E by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, hFE of 300, Vce of 30V, and IC of 0.7A. Ideal for switching applications with a transition frequency of 540MHz.

Median Price

$0.388

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 6,000 parts In-Stock

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$0.107

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Mouser Electronics

USA . 6,151 parts In-Stock

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$0.670

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$0.266

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$0.201

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$0.670

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DigiKey

USA . 1,194 parts In-Stock

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$0.670

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$0.266

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$0.180

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1,194

$0.670

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Verical

USA . 3,000 parts In-Stock

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$0.101

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$0.101

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Digiode

USA . 1,957 parts In-Stock

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$0.475

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Vyrian

USA . 2,295 parts In-Stock

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$0.500

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Chip Stock

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ACDS - Activité Composants Distribution Service

France . 6,876 parts In-Stock

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Corphita

USA . 282 parts In-Stock

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$0.450

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282

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Corohmni

South Africa . 339 parts In-Stock

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$0.500

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Perfect Parts

USA . 16,949 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 6,876 parts In-Stock

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TANS Electronics

Latvia . 6,346 parts In-Stock

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Glotronic Ltd.

UK . 5,501 parts In-Stock

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Kepictronics

USA . 5,051 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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SupplyDigital Components

Austria . 3,591 parts In-Stock

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Kulean Microsystems

USA . 2,977 parts In-Stock

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Problanco Electronics

Mexico . 1,394 parts In-Stock

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UHIMA Technologies

Türkiye . 384 parts In-Stock

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Overview

Discover the power of the MCH6541-TL-E by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With NPN and PNP configurations in a compact package, this transistor offers reliable performance and durability. Whether you're designing circuits for consumer electronics or industrial automation, the MCH6541-TL-E delivers exceptional value, efficiency, and versatility. Trust Onsemi's reputation for excellence and elevate your projects with this advanced semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides lightweight and durable packaging for the transistors, making them suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for flexibility in circuit design and compatibility with different applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements in the transistor enables more precise control and versatility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off operations.

Surface Mount: YES

Enables easy and efficient assembly on circuit boards, saving space and reducing overall product size.

Maximum Collector-Emitter Voltage: 30 V

With a high voltage rating, these transistors are suitable for applications requiring higher voltage tolerances.

Maximum Collector Current (IC): 0.7 A

The high collector current rating allows for handling larger currents, making these transistors suitable for various applications.

Nominal Transition Frequency (fT): 540 MHz

With a high transition frequency, these transistors are ideal for high-frequency applications where fast switching speeds are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6541-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

300

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH6541-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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