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MCH6202

Onsemi

MCH6202 by Onsemi

The Onsemi MCH6202 is a NPN BJT with 1W power dissipation, hFE of 200, and IC of 1.5A. Ideal for applications requiring a single configuration in surface mount technology, it operates up to 150 °C making it suitable for various electronic designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,462 parts In-Stock

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Vyrian

USA . 494 parts In-Stock

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494

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SupplyDigital Components

Austria . 7,999 parts In-Stock

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Problanco Electronics

Mexico . 7,321 parts In-Stock

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Kulean Microsystems

USA . 6,382 parts In-Stock

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Corphita

USA . 1,467 parts In-Stock

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UHIMA Technologies

Türkiye . 371 parts In-Stock

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TANS Electronics

Latvia . 234 parts In-Stock

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Corohmni

South Africa . 123 parts In-Stock

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Overview

Unlock unlimited possibilities with the MCH6202 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in every product they offer. The MCH6202, a Small Signal Bipolar Junction Transistor (BJT) with NPN polarity, is perfect for a wide range of applications. From amplifiers to switching circuits, this transistor delivers exceptional performance and efficiency. Experience unrivaled value and benefits with the MCH6202, providing customers with the advantage they need to succeed in their projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits due to their ability to amplify the signal while maintaining high input impedance.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces component count, making it easier to integrate into a wide range of applications.

Surface Mount: YES

Surface mount packaging allows for easy and flexible mounting on PCBs, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels, making it suitable for a variety of low to medium power applications.

Minimum DC Current Gain (hFE): 200

A minimum DC current gain of 200 ensures reliable and stable amplification of signals, providing consistent performance in various circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows for handling higher current levels, making it ideal for applications requiring amplified signal currents.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6202 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

200

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

MCH6202 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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