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MCH6202-TL-E

Onsemi

MCH6202-TL-E by Onsemi

MCH6202-TL-E by Onsemi is a NPN BJT transistor for switching applications. It has a hFE of 200, Vce of 30V, and fT of 500MHz. With IC max at 1.5A, it offers fast ton at 35ns and toff at 237ns making it suitable for high-speed switching circuits in compact designs.

Median Price

$0.157

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 71,770 parts In-Stock

1+ parts

-

100+ parts

$0.170

1k+ parts

$0.141

10k+ parts

$0.126

71,770

-

$0.170

$0.141

$0.126

Farnell

UK . 71,770 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.155

71,770

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$0.155

Verical

USA . 45,000 parts In-Stock

1+ parts

-

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$0.157

45,000

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$0.157

Distributors (In-Stock)

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Digiode

USA . 1,916 parts In-Stock

1+ parts

$0.139

100+ parts

-

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1,916

$0.139

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Vyrian

USA . 2,000 parts In-Stock

1+ parts

$0.146

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2,000

$0.146

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Chip Stock

USA . 47,000 parts In-Stock

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47,000

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Distributors (Availability)

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Corphita

USA . 2,051 parts In-Stock

1+ parts

$0.131

100+ parts

-

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2,051

$0.131

-

-

-

Corohmni

South Africa . 382 parts In-Stock

1+ parts

$0.146

100+ parts

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382

$0.146

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Component Stockers USA

USA . 56,982 parts In-Stock

1+ parts

$0.150

100+ parts

$0.140

1k+ parts

$0.130

10k+ parts

$0.130

56,982

$0.150

$0.140

$0.130

$0.130

Aztec Data Supply Inc.

USA . 200 parts In-Stock

1+ parts

$1.521

100+ parts

-

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200

$1.521

-

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Continental Prestige Electronics

USA . 71,770 parts In-Stock

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$0.155

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71,770

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$0.155

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Kepictronics

USA . 30,000 parts In-Stock

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30,000

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QUARKTWIN TECHNOLOGY LTD

USA . 26,483 parts In-Stock

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26,483

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Problanco Electronics

Mexico . 5,603 parts In-Stock

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Perfect Parts

USA . 4,446 parts In-Stock

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4,446

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TANS Electronics

Latvia . 3,392 parts In-Stock

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3,392

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SupplyDigital Components

Austria . 2,916 parts In-Stock

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2,916

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Kulean Microsystems

USA . 2,082 parts In-Stock

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2,082

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UHIMA Technologies

Türkiye . 648 parts In-Stock

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648

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Overview

Upgrade your electronic designs with the MCH6202-TL-E by Onsemi, a Small Signal Bipolar Junction Transistor that offers high-quality performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for switching applications. With a maximum collector-emitter voltage of 30V and a maximum collector current of 1.5A, this transistor provides efficient operation. Its fast turn-on and turn-off times make it a valuable component for a wide range of electronic projects. Trust Onsemi's expertise and choose the MCH6202-TL-E for your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in digital and analog circuits, making it versatile for different applications.

Configuration: SINGLE

Simplified circuit design with a single transistor, reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easy integration into surface mount technology, saving space and enabling high-density circuit design.

Package Shape: RECTANGULAR

Standard shape that is easy to handle and mount onto PCBs.

Minimum DC Current Gain (hFE): 200

High current gain ensures efficient amplification of signals in circuits.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low-to-medium voltage applications, offering a wide operating range.

Transistor Element Material: SILICON

Silicon material offers high reliability and stability in performance.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 1.5 A

Capable of handling relatively high current levels, suitable for various applications.

Maximum Turn Off Time (toff): 237 ns

Quick turn-off time prevents unwanted signal overlap, improving circuit efficiency.

Terminal Position: DUAL

Dual terminal position allows for easy connectivity and flexibility in circuit design.

Nominal Transition Frequency (fT): 500 MHz

High transition frequency enables efficient switching and amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6202-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

237 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MCH6202-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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