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MCH6535

Onsemi

MCH6535 by Onsemi

Onsemi's MCH6535 is a Small Signal BJT with NPN and PNP channels. It features 0.55W power dissipation, 300 min hFE, and 1A collector current. Ideal for applications requiring high gain amplification in compact designs at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,002 parts In-Stock

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Vyrian

USA . 1,130 parts In-Stock

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Kulean Microsystems

USA . 7,039 parts In-Stock

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SupplyDigital Components

Austria . 3,374 parts In-Stock

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Corphita

USA . 1,864 parts In-Stock

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TANS Electronics

Latvia . 580 parts In-Stock

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UHIMA Technologies

Türkiye . 546 parts In-Stock

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Problanco Electronics

Mexico . 153 parts In-Stock

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Corohmni

South Africa . 81 parts In-Stock

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Overview

Discover the power of the MCH6535 by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor that combines quality and reliability. With both NPN and PNP options available in a compact surface mount design, this versatile component is perfect for a wide range of applications. From amplifiers to switches, the MCH6535 offers high performance with a maximum power dissipation of 0.55W and a minimum DC current gain of 300. Trust in Onsemi's expertise and elevate your projects with the MCH6535.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a variety of applications.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and space in electronic designs.

Maximum Power Dissipation (Abs): 0.55 W

With a relatively high power dissipation capability, this transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 300

A high DC current gain ensures consistent and stable amplification in signal processing applications, leading to accurate and reliable output signals.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance in a wide range of environmental conditions, making this transistor suitable for industrial and automotive applications.

Maximum Collector Current (IC): 1 A

With a high maximum collector current rating, this transistor can handle relatively high currents, making it suitable for power control and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6535 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Minimum DC Current Gain (hFE):

300

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Trade Compliance

MCH6535 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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