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MCH6203-TL-E

Onsemi

MCH6203-TL-E by Onsemi

MCH6203-TL-E by Onsemi is a NPN BJT transistor for switching applications. It has a min hFE of 200, max VCE of 50V, and fT of 420MHz. With a small outline package style, it's ideal for surface mount designs requiring high-speed switching capabilities.

Median Price

$0.670

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

$0.115

100+ parts

$0.108

1k+ parts

$0.098

10k+ parts

-

3,000

$0.115

$0.108

$0.098

-

Mouser Electronics

USA . 3,495 parts In-Stock

1+ parts

$0.670

100+ parts

$0.266

1k+ parts

$0.216

10k+ parts

$0.132

3,495

$0.670

$0.266

$0.216

$0.132

DigiKey

USA . 440 parts In-Stock

1+ parts

$0.670

100+ parts

$0.265

1k+ parts

$0.180

10k+ parts

-

440

$0.670

$0.265

$0.180

-

Distributors (In-Stock)

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Digiode

USA . 422 parts In-Stock

1+ parts

$0.109

100+ parts

-

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422

$0.109

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-

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Vyrian

USA . 1,995 parts In-Stock

1+ parts

$0.115

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1,995

$0.115

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Flip Electronics

USA . 404,200 parts In-Stock

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404,200

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Chip Stock

USA . 49,000 parts In-Stock

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49,000

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Cogito LLC

Ukraine . 32 parts In-Stock

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32

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Distributors (Availability)

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Corphita

USA . 2,393 parts In-Stock

1+ parts

$0.103

100+ parts

-

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2,393

$0.103

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Corohmni

South Africa . 165 parts In-Stock

1+ parts

$0.115

100+ parts

-

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165

$0.115

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QUARKTWIN TECHNOLOGY LTD

USA . 17,097 parts In-Stock

1+ parts

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17,097

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Kulean Microsystems

USA . 8,062 parts In-Stock

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8,062

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Perfect Parts

USA . 6,558 parts In-Stock

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6,558

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Problanco Electronics

Mexico . 4,619 parts In-Stock

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4,619

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TANS Electronics

Latvia . 1,162 parts In-Stock

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1,162

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UHIMA Technologies

Türkiye . 467 parts In-Stock

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467

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SupplyDigital Components

Austria . 103 parts In-Stock

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103

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

The Onsemi MCH6203-TL-E Small Signal Bipolar Junction Transistor offers unparalleled quality and reliability, thanks to its manufacturer's reputation for top-notch components. Ideal for switching applications, this NPN transistor provides a maximum collector-emitter voltage of 50V and a nominal transition frequency of 420 MHz. With a minimum DC current gain of 200 and a maximum collector current of 1A, this product ensures optimal performance. Trust in the value and benefits of Onsemi's MCH6203-TL-E for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures durability and long-term reliability of the transistor.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into common electronic circuits, making it a versatile choice.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to use in various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance.

Surface Mount: YES

Being surface mount compatible, this transistor is easier to handle during manufacturing processes and can be placed directly on the circuit board.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on the circuit board, ideal for compact electronic designs.

Terminal Form: FLAT

The flat terminal form provides a secure and reliable connection within the circuit, reducing the risk of loose connections.

No. of Terminals: 6

With 6 terminals, this transistor offers flexibility in circuit configurations and can accommodate a range of connection options.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The minimum DC current gain of 200 indicates the transistor's ability to amplify current effectively, making it a reliable choice for signal amplification.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a range of voltage levels, increasing its versatility in different applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, ensuring stable and consistent performance over time.

Maximum Collector Current (IC): 1 A

The maximum collector current of 1A allows this transistor to handle moderate to high current loads, making it suitable for various applications.

Terminal Position: DUAL

Having a dual terminal position provides flexibility in mounting and connectivity options, allowing for easier integration into different circuit layouts.

Nominal Transition Frequency (fT): 420 MHz

The high nominal transition frequency of 420 MHz indicates the transistor's ability to switch quickly between on and off states, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6203-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH6203-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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