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MCH6103-TL-E

Onsemi

MCH6103-TL-E by Onsemi

MCH6103-TL-E by Onsemi is a PNP BJT transistor with 200 min hFE, 50V VCE, and 1A IC. Ideal for switching applications, it has a fT of 420MHz and comes in a small outline package suitable for surface mount technology.

Median Price

$0.670

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,186 parts In-Stock

1+ parts

$0.670

100+ parts

$0.266

1k+ parts

$0.201

10k+ parts

$0.144

2,186

$0.670

$0.266

$0.201

$0.144

DigiKey

USA . 222 parts In-Stock

1+ parts

$0.670

100+ parts

$0.265

1k+ parts

$0.180

10k+ parts

-

222

$0.670

$0.265

$0.180

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,865 parts In-Stock

1+ parts

$0.542

100+ parts

-

1k+ parts

-

10k+ parts

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1,865

$0.542

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-

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Vyrian

USA . 915 parts In-Stock

1+ parts

$0.570

100+ parts

-

1k+ parts

-

10k+ parts

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915

$0.570

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 468 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

-

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468

$0.380

-

-

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Component Stockers USA

USA . 5,647 parts In-Stock

1+ parts

$0.420

100+ parts

$0.190

1k+ parts

$0.130

10k+ parts

-

5,647

$0.420

$0.190

$0.130

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Corphita

USA . 617 parts In-Stock

1+ parts

$0.513

100+ parts

-

1k+ parts

-

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617

$0.513

-

-

-

Metaverse IC Inc.

Canada . 66,000 parts In-Stock

1+ parts

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66,000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

1+ parts

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100+ parts

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30,000

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Perfect Parts

USA . 29,928 parts In-Stock

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29,928

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QUARKTWIN TECHNOLOGY LTD

USA . 8,041 parts In-Stock

1+ parts

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8,041

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Kepictronics

USA . 7,000 parts In-Stock

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7,000

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iodParts Technologies Inc.

India . 6,000 parts In-Stock

1+ parts

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6,000

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SupplyDigital Components

Austria . 5,824 parts In-Stock

1+ parts

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5,824

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Problanco Electronics

Mexico . 4,274 parts In-Stock

1+ parts

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4,274

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Kulean Microsystems

USA . 2,989 parts In-Stock

1+ parts

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2,989

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TANS Electronics

Latvia . 2,108 parts In-Stock

1+ parts

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2,108

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UHIMA Technologies

Türkiye . 949 parts In-Stock

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949

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Overview

Enhance your electronic projects with the MCH6103-TL-E by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. This PNP small signal bipolar junction transistor is perfect for switching applications, offering a maximum collector-emitter voltage of 50V and a nominal transition frequency of 420 MHz. With a minimum DC current gain of 200 and a maximum collector current of 1A, this transistor delivers exceptional performance. Whether you're a hobbyist or a professional, the MCH6103-TL-E provides excellent value, efficiency, and versatility for all your electronics needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material is lightweight, durable, and cost-effective, making it ideal for consumer electronics and low power applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switch configurations and complement NPN transistors in various circuit designs.

Configuration: SINGLE

Single configuration transistors are easy to control and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient operation in on/off scenarios.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and compact circuit designs, ideal for space-constrained applications.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and placement on the PCB, improving manufacturing efficiency.

Terminal Form: FLAT

Flat terminals ensure secure soldering connections, reducing the risk of electrical malfunctions or disconnections.

No. of Terminals: 6

Six terminals provide flexibility in circuit connections and enable more complex circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for densely populated circuits, ideal for miniaturized devices.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures consistent and reliable amplification in various transistor applications.

Maximum Collector-Emitter Voltage: 50 V

High maximum collector-emitter voltage allows for operation in a wide range of voltage levels, improving versatility in circuit design.

Transistor Element Material: SILICON

Silicon material offers superior performance, reliability, and temperature stability compared to other semiconductor materials.

Maximum Collector Current (IC): 1 A

High maximum collector current enables the transistor to handle larger loads and power levels, suitable for various switching applications.

Terminal Position: DUAL

Dual terminal position allows for easy identification and connection of input and output terminals, reducing errors during installation.

Nominal Transition Frequency (fT): 420 MHz

High nominal transition frequency indicates fast switching speed and high frequency response, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MCH6103-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MCH6103-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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