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BC857BWH6327XTSA1

Infineon Technologies

BC857BWH6327XTSA1 by Infineon Technologies

BC857BWH6327XTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications, it features a Gull Wing terminal form in a small outline package style. Suitable for surface mount assembly with dual terminals and AEC-Q101 compliance.

Median Price

$0.037

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 178,678 parts In-Stock

1+ parts

-

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$0.052

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$0.043

10k+ parts

$0.039

178,678

-

$0.052

$0.043

$0.039

Verical

USA . 57,000 parts In-Stock

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$0.044

57,000

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$0.044

Arrow

USA . 12,000 parts In-Stock

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$0.028

12,000

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$0.028

Chip1Stop

Japan . 12,000 parts In-Stock

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$0.037

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$0.037

RS (Exports)

UK . 100 parts In-Stock

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$0.028

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$0.027

100

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$0.028

$0.027

Distributors (In-Stock)

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Digiode

USA . 107 parts In-Stock

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$0.030

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107

$0.030

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Nova Conductors

Japan . 42 parts In-Stock

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$0.062

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42

$0.062

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ACDS - Activité Composants Distribution Service

France . 27,000 parts In-Stock

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Chip Stock

USA . 23,500 parts In-Stock

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Vyrian

USA . 9,124 parts In-Stock

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VNN

France . 694 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 40,000 parts In-Stock

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$0.024

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$0.024

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Semicontronic

India . 39,976 parts In-Stock

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$0.024

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$0.023

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$0.023

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39,976

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$0.023

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Corphita

USA . 887 parts In-Stock

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$0.029

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887

$0.029

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Modulus Dynamics

Lithuania . 12,112 parts In-Stock

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$0.043

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$0.041

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$0.040

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12,112

$0.043

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$0.040

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Corohmni

South Africa . 230 parts In-Stock

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$0.043

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230

$0.043

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Continental Prestige Electronics

USA . 3,214 parts In-Stock

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$0.062

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$0.061

3,214

$0.062

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$0.061

Argo Parts USA

USA . 2,435 parts In-Stock

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$0.062

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$0.060

2,435

$0.062

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$0.060

Aztec Data Supply Inc.

USA . 3,989 parts In-Stock

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$1.935

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3,989

$1.935

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AZTECH Wire

Italy . 460 parts In-Stock

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$12.400

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$12.400

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Perfect Parts

USA . 18,157 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 14,345 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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100+ parts

$0.061

1k+ parts

$0.059

10k+ parts

$0.058

100

-

$0.061

$0.059

$0.058

Overview

Elevate your electronic designs with the BC857BWH6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unparalleled quality and reliability for amplifier applications. Its PNP polarity, high DC current gain, and maximum collector-emitter voltage of 45V make it a versatile choice for various circuit designs. With a surface-mount package and dual-terminal position, this transistor is easy to integrate into your projects. Trust in the value and performance that Infineon Technologies delivers with every component, and take your innovations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required for proper circuit operation.

Configuration: SINGLE

Simplified circuit design and straightforward implementation.

Transistor Application: AMPLIFIER

Specifically designed for amplifier circuits, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Enables easy and efficient mounting on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Compact package shape for efficient use of board space and easy integration into various electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and connection to the PCB, enhancing reliability and manufacturability.

No. of Terminals: 3

Simple 3-terminal configuration for straightforward connections and circuit integration.

Package Style (Meter): SMALL OUTLINE

Low-profile package style ideal for space-constrained applications.

Minimum DC Current Gain (hFE): 220

High DC current gain ensures efficient amplification and signal processing.

Maximum Collector-Emitter Voltage: 45 V

Supports a wide range of voltage requirements in various circuit applications.

Transistor Element Material: SILICON

High-quality silicon material for reliable and stable transistor performance.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for many small signal applications.

Terminal Finish: TIN

Tin terminal finish for good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position for flexible PCB layout options and ease of connection.

Reference Standard: AEC-Q101

Compliance with automotive industry standards for high reliability and performance in automotive applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast signal processing and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857BWH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC857BWH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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