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BCR116WH6327XTSA1

Infineon Technologies

BCR116WH6327XTSA1 by Infineon Technologies

BCR116WH6327XTSA1 by Infineon Technologies is a NPN BJT with built-in resistor for switching applications. It has a hFE of 70, Vce(max) of 50V, and fT of 150MHz. This small outline transistor is surface mountable with Gull Wing terminals, ideal for compact electronic designs.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,192 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.040

10,192

-

$0.053

$0.044

$0.040

Verical

USA . 10,192 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

10,192

-

-

-

$0.050

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

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3,000

-

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 6 parts In-Stock

1+ parts

$0.042

100+ parts

-

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6

$0.042

-

-

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.086

100+ parts

-

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-

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450

$0.086

-

-

-

Ozdisan Elektronik

Türkiye . 10,395 parts In-Stock

1+ parts

$57.130

100+ parts

-

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-

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10,395

$57.130

-

-

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Rutronik

Germany . 27,000 parts In-Stock

1+ parts

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27,000

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Vyrian

USA . 2,993 parts In-Stock

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2,993

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TME

Poland . 2,490 parts In-Stock

1+ parts

-

100+ parts

$0.067

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2,490

-

$0.067

-

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VNN

France . 831 parts In-Stock

1+ parts

-

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831

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 198,245 parts In-Stock

1+ parts

$0.037

100+ parts

-

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198,245

$0.037

-

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Semicontronic

India . 197,920 parts In-Stock

1+ parts

$0.037

100+ parts

$0.036

1k+ parts

$0.036

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-

197,920

$0.037

$0.036

$0.036

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Corphita

USA . 276 parts In-Stock

1+ parts

$0.040

100+ parts

-

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276

$0.040

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Continental Prestige Electronics

USA . 6,694 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

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10k+ parts

$0.084

6,694

$0.086

-

-

$0.084

Argo Parts USA

USA . 2,925 parts In-Stock

1+ parts

$0.086

100+ parts

-

1k+ parts

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10k+ parts

$0.083

2,925

$0.086

-

-

$0.083

Corohmni

South Africa . 920 parts In-Stock

1+ parts

$0.647

100+ parts

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920

$0.647

-

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Aztec Data Supply Inc.

USA . 800 parts In-Stock

1+ parts

$1.328

100+ parts

-

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800

$1.328

-

-

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Modulus Dynamics

Lithuania . 10,285 parts In-Stock

1+ parts

$1.940

100+ parts

$1.862

1k+ parts

$1.785

10k+ parts

-

10,285

$1.940

$1.862

$1.785

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AZTECH Wire

Italy . 447 parts In-Stock

1+ parts

$17.830

100+ parts

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447

$17.830

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Perfect Parts

USA . 144,558 parts In-Stock

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144,558

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RC Electronics

USA . 55,362 parts In-Stock

1+ parts

-

100+ parts

$0.090

1k+ parts

$0.080

10k+ parts

$0.080

55,362

-

$0.090

$0.080

$0.080

Authorized Procurement Solutions

USA . 35,825 parts In-Stock

1+ parts

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35,825

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GreenTree Electronics

Israel . 30,425 parts In-Stock

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30,425

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Eastek

USA . 27,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.110

10k+ parts

-

27,000

-

-

$0.110

-

Overview

Upgrade your electronic devices with the BCR116WH6327XTSA1 by Infineon Technologies, a high-quality NPN Small Signal Bipolar Junction Transistor with a built-in resistor. Whether you're looking to enhance switching applications or improve overall performance, this transistor offers reliable and efficient operation. Trust in Infineon Technologies' expertise in semiconductor manufacturing to deliver top-notch products that meet your needs. Experience the benefits of this versatile component and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

Commonly used type which allows for versatile circuit design options.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already having a resistor built-in.

Transistor Application: SWITCHING

Suitable for applications where fast switching is required.

Surface Mount: YES

Can be easily mounted on PCBs, saving space and enabling automated assembly.

Package Shape: RECTANGULAR

Compact shape allows for efficient use of space on the PCB.

No. of Terminals: 3

Simple connection with only 3 terminals, reducing complexity in circuit design.

Minimum DC Current Gain (hFE): 70

Provides consistent and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

Can handle higher voltages, making it suitable for various applications.

Transistor Element Material: SILICON

Silicon is a commonly used material in transistors known for its high performance.

Maximum Collector Current (IC): 0.1 A

Capable of handling higher currents for demanding applications.

Terminal Finish: TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: DUAL

Allows for easy connection to other components in the circuit.

Nominal Transition Frequency (fT): 150 MHz

Capable of operating at high frequencies, making it suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR116WH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR116WH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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