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2SD1816S-E

Onsemi

2SD1816S-E by Onsemi

The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.

Median Price

$0.438

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,980 parts In-Stock

1+ parts

-

100+ parts

$0.438

1k+ parts

$0.364

10k+ parts

$0.324

1,980

-

$0.438

$0.364

$0.324

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 708 parts In-Stock

1+ parts

$0.341

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-

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708

$0.341

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Chip Stock

USA . 39,000 parts In-Stock

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39,000

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Vyrian

USA . 4,259 parts In-Stock

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4,259

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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3,000

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Distributors (Availability)

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Corphita

USA . 1,906 parts In-Stock

1+ parts

$0.323

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-

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1,906

$0.323

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Corohmni

South Africa . 238 parts In-Stock

1+ parts

$0.359

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238

$0.359

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Native Components

USA . 534 parts In-Stock

1+ parts

$7.675

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534

$7.675

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AZTECH Wire

Italy . 913 parts In-Stock

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$10.930

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913

$10.930

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QUARKTWIN TECHNOLOGY LTD

USA . 29,533 parts In-Stock

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29,533

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Kulean Microsystems

USA . 7,708 parts In-Stock

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7,708

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Assy Fe

Spain . 7,405 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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6,720

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Kepictronics

USA . 5,090 parts In-Stock

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TANS Electronics

Latvia . 4,140 parts In-Stock

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SupplyDigital Components

Austria . 3,269 parts In-Stock

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3,269

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Cyclops Electronics Ltd (Excess)

UK . 3,000 parts In-Stock

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3,000

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Northwest PG Solutions

USA . 767 parts In-Stock

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$7.522

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767

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$7.522

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Problanco Electronics

Mexico . 679 parts In-Stock

1+ parts

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679

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UHIMA Technologies

Türkiye . 481 parts In-Stock

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481

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Overview

Unlock the power of quality and reliability with the 2SD1816S-E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors (BJT) like no other. Whether you're looking to enhance your circuit designs or improve switching applications, this NPN transistor offers unmatched performance and durability. With a maximum power dissipation of 20W and a minimum DC current gain of 140, the 2SD1816S-E guarantees superior results. Trust Onsemi to provide you with the quality and value you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides a lightweight and durable package for easy handling and protection of the transistor.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product versatile in various electronic circuits.

Configuration: SINGLE

Single configuration simplifies circuit design and layout, making it easier to incorporate this transistor into electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in on/off scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards, maximizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ensuring reliable operation in electronic circuits.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect and integrate into circuits with minimal wiring required.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows the transistor to handle heavy loads and operate efficiently under high-power conditions.

Package Style (Meter): IN-LINE

In-line package style offers convenient mounting options and compatibility with standard meter sockets for easy installation.

Minimum DC Current Gain (hFE): 140

High minimum DC current gain ensures reliable amplification and signal control in electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and operate reliably in various environments.

Maximum Collector-Emitter Voltage: 100 V

High maximum collector-emitter voltage rating provides robust protection against voltage spikes and overloads in the circuit.

Transistor Element Material: SILICON

Silicon material offers superior performance and stability for the transistor, ensuring long-term reliability and consistent operation.

Maximum Collector Current (IC): 4 A

With a high maximum collector current rating, this transistor can handle heavy output loads and operate efficiently in high-current applications.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides excellent solderability and corrosion resistance, ensuring secure connections and long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies wiring and connection, making it easy to incorporate this transistor into electronic circuits.

Case Connection: COLLECTOR

Collector case connection offers easy integration into circuits and efficient heat dissipation for reliable transistor performance.

Nominal Transition Frequency (fT): 180 MHz

High nominal transition frequency allows for fast response times and efficient switching performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816S-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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