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2SD1816S-TL-H

Onsemi

2SD1816S-TL-H by Onsemi

Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.

Median Price

$0.317

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 240 parts In-Stock

1+ parts

$0.850

100+ parts

$0.512

1k+ parts

$0.512

10k+ parts

$0.326

240

$0.850

$0.512

$0.512

$0.326

Rochester

USA . 221,422 parts In-Stock

1+ parts

-

100+ parts

$0.317

1k+ parts

$0.263

10k+ parts

$0.234

221,422

-

$0.317

$0.263

$0.234

Verical

USA . 149,800 parts In-Stock

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$0.293

149,800

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$0.293

Flip Electronics (Authorized)

USA . 4,900 parts In-Stock

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4,900

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Distributors (In-Stock)

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Digiode

USA . 391 parts In-Stock

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$0.312

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391

$0.312

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Vyrian

USA . 12,712 parts In-Stock

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Flip Electronics

USA . 4,900 parts In-Stock

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4,900

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Distributors (Availability)

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Andel Nordic

Denmark . 836 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

836

$0.090

-

$0.061

$0.061

Corphita

USA . 646 parts In-Stock

1+ parts

$0.295

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-

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646

$0.295

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Corohmni

South Africa . 58 parts In-Stock

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$0.328

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58

$0.328

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Native Components

USA . 325 parts In-Stock

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$7.184

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325

$7.184

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Kepictronics

USA . 448,300 parts In-Stock

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448,300

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Continental Prestige Electronics

USA . 222,122 parts In-Stock

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$0.297

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222,122

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$0.297

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QUARKTWIN TECHNOLOGY LTD

USA . 8,049 parts In-Stock

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8,049

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Kulean Microsystems

USA . 7,686 parts In-Stock

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7,686

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Problanco Electronics

Mexico . 6,489 parts In-Stock

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6,489

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SupplyDigital Components

Austria . 3,516 parts In-Stock

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3,516

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TANS Electronics

Latvia . 3,345 parts In-Stock

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Metaverse IC Inc.

Canada . 2,665 parts In-Stock

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2,665

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Northwest PG Solutions

USA . 1,840 parts In-Stock

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$7.040

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1,840

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$7.040

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UHIMA Technologies

Türkiye . 758 parts In-Stock

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758

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Overview

Unleash the power of innovation with the 2SD1816S-TL-H by Onsemi! Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance in switching applications. Its NPN configuration and high DC current gain ensure optimal functionality, while its compact design and surface-mount capability make installation a breeze. Trust in Onsemi's reputation for quality and reliability, and experience the seamless integration of technology and efficiency with the 2SD1816S-TL-H. Elevate your projects to new heights with this cutting-edge transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good thermal performance and durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and efficiency.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to integrate into circuits and reduce complexity.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering fast response times and efficient operation.

Surface Mount: YES

Allows for easy and efficient surface-mounting on PCBs, saving space and improving assembly processes.

Maximum Power Dissipation (Abs): 20 W

High power dissipation capability allows for handling larger loads and operating in demanding environments.

Package Shape: RECTANGULAR

Rectangular shape is commonly used in surface-mount packages, providing easy handling and alignment during assembly.

No. of Terminals: 2

Simple two-terminal configuration for easy integration and connection in circuits.

Maximum Collector-Emitter Voltage: 100 V

Suitable for applications requiring higher voltage handling capabilities, ensuring reliable operation.

Maximum Collector Current (IC): 4 A

High collector current rating allows for handling larger currents, making it suitable for a wide range of applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816S-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816S-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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