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2SB1216S-H

Onsemi

2SB1216S-H by Onsemi

The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Chip Stock

USA . 68,000 parts In-Stock

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Vyrian

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Native Components

USA . 147 parts In-Stock

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$0.756

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Northwest PG Solutions

USA . 1,993 parts In-Stock

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AZTECH Wire

Italy . 626 parts In-Stock

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Component Stockers USA

USA . 213 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,812 parts In-Stock

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Problanco Electronics

Mexico . 7,514 parts In-Stock

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Corphita

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TANS Electronics

Latvia . 2,016 parts In-Stock

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Kulean Microsystems

USA . 1,658 parts In-Stock

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SupplyDigital Components

Austria . 1,450 parts In-Stock

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UHIMA Technologies

Türkiye . 605 parts In-Stock

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Overview

Unlock the power of seamless switching with the Onsemi 2SB1216S-H Small Signal Bipolar Junction Transistor. Crafted by a renowned manufacturer, this PNP transistor offers exceptional quality and reliability for various applications. With a maximum power dissipation of 20W and a maximum collector-emitter voltage of 100V, this transistor is designed to deliver superior performance. Whether you're looking to enhance your electronic projects or improve your circuit designs, the 2SB1216S-H provides unmatched value and benefits that will elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, making it suitable for various applications.

Polarity or Channel Type: PNP

The PNP polarity allows for easy integration into circuit designs that require PNP transistors, providing flexibility in usage.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to handle during assembly and troubleshooting.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance in electronic circuits.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation rating, this transistor can handle moderate power levels without overheating.

Terminal Form: THROUGH-HOLE

The through-hole terminal form allows for easy manual or automated soldering onto a circuit board, ensuring secure connections.

Maximum Collector-Emitter Voltage: 100 V

The high maximum collector-emitter voltage rating provides versatility in circuit design and ensures reliable operation under varying voltage conditions.

Maximum Collector Current (IC): 4 A

With a high maximum collector current rating, this transistor can handle large currents, making it suitable for power switching applications.

Nominal Transition Frequency (fT): 130 MHz

The high nominal transition frequency indicates fast response times and high-frequency operation, making it suitable for high-speed switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1216S-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1216S-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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