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2SD1816S-H

Onsemi

2SD1816S-H by Onsemi

Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.

Median Price

$0.402

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 20 parts In-Stock

1+ parts

$0.850

100+ parts

$0.512

1k+ parts

$0.367

10k+ parts

$0.306

20

$0.850

$0.512

$0.367

$0.306

Rochester

USA . 41,000 parts In-Stock

1+ parts

-

100+ parts

$0.357

1k+ parts

$0.297

10k+ parts

$0.265

41,000

-

$0.357

$0.297

$0.265

DigiKey

USA . 41,000 parts In-Stock

1+ parts

-

100+ parts

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$0.450

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41,000

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$0.450

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Farnell

UK . 35,000 parts In-Stock

1+ parts

-

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$0.399

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35,000

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$0.399

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Verical

USA . 4,000 parts In-Stock

1+ parts

-

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-

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$0.402

10k+ parts

$0.331

4,000

-

-

$0.402

$0.331

Distributors (In-Stock)

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Digiode

USA . 2,239 parts In-Stock

1+ parts

$0.312

100+ parts

-

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2,239

$0.312

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Chip Stock

USA . 30,000 parts In-Stock

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30,000

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Vyrian

USA . 8,755 parts In-Stock

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8,755

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Distributors (Availability)

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Ampacity Inc.

Singapore . 19,676 parts In-Stock

1+ parts

$0.279

100+ parts

-

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-

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19,676

$0.279

-

-

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Corphita

USA . 449 parts In-Stock

1+ parts

$0.295

100+ parts

-

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449

$0.295

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Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.328

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69

$0.328

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Continental Prestige Electronics

USA . 35,500 parts In-Stock

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$0.315

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35,500

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$0.315

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Kepictronics

USA . 35,500 parts In-Stock

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35,500

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QUARKTWIN TECHNOLOGY LTD

USA . 23,572 parts In-Stock

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23,572

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Kulean Microsystems

USA . 8,072 parts In-Stock

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8,072

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SupplyDigital Components

Austria . 5,957 parts In-Stock

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5,957

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Problanco Electronics

Mexico . 3,147 parts In-Stock

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3,147

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Northwest PG Solutions

USA . 910 parts In-Stock

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910

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Native Components

USA . 702 parts In-Stock

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702

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UHIMA Technologies

Türkiye . 335 parts In-Stock

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335

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TANS Electronics

Latvia . 145 parts In-Stock

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145

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Overview

Unlock the power of high-quality switching applications with the Onsemi 2SD1816S-H Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, a trusted name in semiconductor technology, this NPN transistor offers exceptional performance and reliability. With a maximum collector-emitter voltage of 100V and a maximum collector current of 4A, this transistor is ideal for a wide range of applications. Experience the value and benefits of this product, from its high power dissipation capability to its low DC current gain. Trust Onsemi to deliver quality components that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering reliable performance.

Configuration: SINGLE

Simplified design and ease of use for applications requiring a single transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering efficiency and fast response times.

Maximum Power Dissipation (Abs): 20 W

Can handle higher power levels without overheating, ensuring reliable performance.

Package Shape: RECTANGULAR

Efficient use of space and easy to mount in various electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy soldering and secure connections in electronic circuits.

No. of Terminals: 3

Simple connection setup for basic transistor circuits.

Maximum Collector-Emitter Voltage: 100 V

Handles higher voltage levels, suitable for a range of applications.

Maximum Collector Current (IC): 4 A

Capable of handling higher current levels, making it versatile for different circuit requirements.

Nominal Transition Frequency (fT): 180 MHz

Offers high frequency performance, suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816S-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

140

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816S-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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