Loading...

2SB1216T-TL-E

Onsemi

2SB1216T-TL-E by Onsemi

2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 15,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

15,000

-

-

-

-

Vyrian

USA . 8,423 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,423

-

-

-

-

Digiode

USA . 1,288 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,288

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 164 parts In-Stock

1+ parts

$5.260

100+ parts

-

1k+ parts

-

10k+ parts

-

164

$5.260

-

-

-

AZTECH Wire

Italy . 278 parts In-Stock

1+ parts

$8.740

100+ parts

-

1k+ parts

-

10k+ parts

-

278

$8.740

-

-

-

Ampacity Inc.

Singapore . 1,574 parts In-Stock

1+ parts

$33.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,574

$33.050

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 21,859 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

21,859

-

-

-

-

Metaverse IC Inc.

Canada . 9,100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,100

-

-

-

-

Kulean Microsystems

USA . 4,674 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,674

-

-

-

-

SupplyDigital Components

Austria . 2,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,950

-

-

-

-

TANS Electronics

Latvia . 1,931 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,931

-

-

-

-

Corphita

USA . 1,721 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,721

-

-

-

-

Problanco Electronics

Mexico . 1,124 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,124

-

-

-

-

Kepictronics

USA . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

700

-

-

-

-

Northwest PG Solutions

USA . 665 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.155

10k+ parts

-

665

-

-

$5.155

-

Corohmni

South Africa . 182 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

182

-

-

-

-

UHIMA Technologies

Türkiye . 75 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

75

-

-

-

-

Overview

Upgrade your electronic projects with the 2SB1216T-TL-E from Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 100V and a compact rectangular package, this PNP transistor offers reliable performance and easy surface-mount installation. Benefit from the superior craftsmanship of Onsemi and unlock new possibilities in your designs with the 2SB1216T-TL-E. Whether you're a hobbyist or a professional, this transistor provides the value and efficiency you need to bring your ideas to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable housing for the transistor, ensuring longevity and stability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, such as complementary switching circuits.

Configuration: SINGLE

Simplified circuit design and ease of integration into electronic systems.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering fast response times and efficient operation.

Surface Mount: YES

Enables easy and space-saving PCB assembly, ideal for compact electronic devices.

Maximum Power Dissipation (Abs): 20 W

Capable of handling high power levels without risking damage to the transistor.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation during PCB assembly, enhancing manufacturing efficiency.

Terminal Form: GULL WING

Provides a secure and reliable connection during surface mount soldering processes.

No. of Terminals: 2

Simple and straightforward connection interface for basic circuit configurations.

Maximum Collector-Emitter Voltage: 100 V

Suitable for a wide range of voltage levels, enhancing versatility in circuit design.

Transistor Element Material: SILICON

Offers robust and consistent performance characteristics, ensuring reliability in various operating conditions.

Maximum Collector Current (IC): 4 A

Capable of handling moderate current levels, suitable for a variety of switching applications.

Terminal Finish: TIN BISMUTH

Provides a reliable and corrosion-resistant finish for the terminal connections, enhancing overall product durability.

Nominal Transition Frequency (fT): 130 MHz

Capable of high-frequency switching operations, making it suitable for various RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1216T-TL-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1216T-TL-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20