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2SB1216T-E

Onsemi

2SB1216T-E by Onsemi

The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.

Median Price

$0.484

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.429

1k+ parts

$0.356

10k+ parts

$0.318

2,000

-

$0.429

$0.356

$0.318

DigiKey

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.540

10k+ parts

-

2,000

-

-

$0.540

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Flip Electronics (Authorized)

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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1,000

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-

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Distributors (In-Stock)

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Digiode

USA . 782 parts In-Stock

1+ parts

$0.330

100+ parts

-

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782

$0.330

-

-

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Chip Stock

USA . 25,000 parts In-Stock

1+ parts

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25,000

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Vyrian

USA . 3,971 parts In-Stock

1+ parts

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3,971

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Flip Electronics

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Distributors (Availability)

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Corphita

USA . 2,349 parts In-Stock

1+ parts

$0.312

100+ parts

-

1k+ parts

-

10k+ parts

-

2,349

$0.312

-

-

-

Component Stockers USA

USA . 2,820 parts In-Stock

1+ parts

$0.360

100+ parts

$0.340

1k+ parts

$0.310

10k+ parts

-

2,820

$0.360

$0.340

$0.310

-

Corohmni

South Africa . 450 parts In-Stock

1+ parts

$1.745

100+ parts

-

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10k+ parts

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450

$1.745

-

-

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$2.163

100+ parts

$1.968

1k+ parts

$1.774

10k+ parts

-

1,000

$2.163

$1.968

$1.774

-

AZTECH Wire

Italy . 791 parts In-Stock

1+ parts

$9.570

100+ parts

-

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791

$9.570

-

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QUARKTWIN TECHNOLOGY LTD

USA . 17,160 parts In-Stock

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17,160

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Kulean Microsystems

USA . 7,853 parts In-Stock

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7,853

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TANS Electronics

Latvia . 6,456 parts In-Stock

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6,456

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SupplyDigital Components

Austria . 2,823 parts In-Stock

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2,823

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Problanco Electronics

Mexico . 2,326 parts In-Stock

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2,326

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Continental Prestige Electronics

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.251

10k+ parts

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2,000

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-

$0.251

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Perfect Parts

USA . 1,680 parts In-Stock

1+ parts

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1,680

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Northwest PG Solutions

USA . 1,305 parts In-Stock

1+ parts

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1,305

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UHIMA Technologies

Türkiye . 588 parts In-Stock

1+ parts

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588

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Native Components

USA . 170 parts In-Stock

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170

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Overview

Unleash the power of innovation with the 2SB1216T-E by Onsemi! Crafted with precision and quality, this Small Signal Bipolar Junction Transistor (BJT) offers reliable performance for switching applications. With a maximum power dissipation of 20W and a maximum collector-emitter voltage of 100V, this PNP transistor is designed to deliver efficiency and durability. Whether you're looking to enhance your electronic projects or boost your circuit design, the 2SB1216T-E provides unmatched value and performance. Elevate your creations with Onsemi's cutting-edge technology and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and mechanical protection for the transistor, ensuring durability and stable performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are preferred, offering versatility and compatibility with specific circuit requirements.

Configuration: SINGLE

Simplified design with single transistor configuration, making it easy to integrate into circuits and reducing complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, delivering fast switching speeds and efficient performance in various electronic circuits.

Package Shape: RECTANGULAR

Space-efficient rectangular shape allows for easy mounting and placement on circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide sturdy connection points for easy soldering and secure attachment to circuit boards.

Maximum Power Dissipation: 20 W

High power dissipation capability ensures reliable operation under varying load conditions and prevents overheating.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures stable and consistent amplification of weak signals, improving overall performance in signal processing applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in demanding environments, ensuring long-term durability and performance.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating provides ample voltage handling capacity, making the transistor suitable for high voltage circuits.

Transistor Element Material: SILICON

Silicon-based material offers superior electrical properties and reliability, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 4 A

High collector current rating allows for efficient current handling, making the transistor suitable for power electronics applications.

Terminal Finish: TIN BISMUTH

Tin bismuth terminal finish ensures good solderability and reliable electrical connections, preventing corrosion and ensuring long-term stability.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation, ensuring ease of use and compatibility with standard industry practices.

Case Connection: COLLECTOR

Collector case connection provides a sturdy attachment point for external connections, ensuring secure mounting and reliable operation.

Nominal Transition Frequency (fT): 130 MHz

High nominal transition frequency allows for fast signal switching and amplification, making the transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SB1216T-E attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-251

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SB1216T-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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