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SMBT3904SH6327XTSA1

Infineon Technologies

SMBT3904SH6327XTSA1 by Infineon Technologies

Infineon's SMBT3904SH6327XTSA1 is a NPN BJT transistor for switching applications. With hFE of 30, VCE of 40V, and fT of 300MHz, it offers fast ton of 70ns and toff of 250ns. Its Gull Wing terminals in a small outline package make it ideal for surface mount designs.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 24,000 parts In-Stock

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24,000

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Chip1Stop

Japan . 12,000 parts In-Stock

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$0.096

12,000

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$0.096

EBV Elektronik

Germany . 6,000 parts In-Stock

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6,000

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Arrow

USA . 3,000 parts In-Stock

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$0.124

3,000

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$0.124

Distributors (In-Stock)

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Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$0.106

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150

$0.106

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Rutronik

Germany . 24,000 parts In-Stock

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Vyrian

USA . 7,260 parts In-Stock

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7,260

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NAC Semi

USA . 6,000 parts In-Stock

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$0.205

6,000

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$0.205

Digiode

USA . 765 parts In-Stock

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765

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TME

Poland . 63 parts In-Stock

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$0.067

1k+ parts

$0.056

10k+ parts

$0.052

63

-

$0.067

$0.056

$0.052

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,310 parts In-Stock

1+ parts

$0.106

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$0.104

5,310

$0.106

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$0.104

Argo Parts USA

USA . 3,641 parts In-Stock

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$0.106

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-

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$0.103

3,641

$0.106

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-

$0.103

Bastille Electronics

Australia . 86 parts In-Stock

1+ parts

$0.106

100+ parts

$0.101

1k+ parts

$0.096

10k+ parts

$0.094

86

$0.106

$0.101

$0.096

$0.094

Ampacity Inc.

Singapore . 11,892 parts In-Stock

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$0.161

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$0.161

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Corohmni

South Africa . 599 parts In-Stock

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$1.001

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599

$1.001

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Modulus Dynamics

Lithuania . 15,831 parts In-Stock

1+ parts

$1.140

100+ parts

$1.094

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$1.049

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15,831

$1.140

$1.094

$1.049

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Aztec Data Supply Inc.

USA . 4,336 parts In-Stock

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$1.550

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$1.550

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AZTECH Wire

Italy . 554 parts In-Stock

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$10.860

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554

$10.860

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Microchip USA

USA . 27,020 parts In-Stock

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Corphita

USA . 741 parts In-Stock

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741

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Component Stockers USA

USA . 524 parts In-Stock

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$0.060

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524

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$0.060

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Overview

Upgrade your electronics with the SMBT3904SH6327XTSA1 by Infineon Technologies, a leading manufacturer known for top-quality components. This small signal bipolar junction transistor (BJT) offers unmatched reliability and performance in switching applications. With a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300MHz, this NPN transistor provides seamless operation. Trust in the value and benefits of this product to enhance your designs and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material makes the transistor ideal for applications where resistance to wear and tear is important.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile for a range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the product easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast turn-on and turn-off times for efficient operation.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, making the transistor suitable for tight spaces and PCB layouts.

Terminal Form: GULL WING

The gull wing terminals offer increased stability and reliability in connection, ensuring consistent performance.

No. of Terminals: 6

With 6 terminals, this transistor provides flexibility in circuit design and allows for complex connections when needed.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and is well-suited for compact electronic devices or PCBs.

Minimum DC Current Gain (hFE): 30

A minimum hFE of 30 ensures consistent and reliable amplification in various circuit applications.

Maximum Collector-Emitter Voltage: 40 V

The high maximum voltage rating offers protection against voltage spikes and ensures the transistor's longevity.

Transistor Element Material: SILICON

The silicon material provides high performance and reliability, making this transistor a durable and long-lasting choice.

Maximum Turn On Time (ton): 70 ns

The fast turn-on time of 70 ns allows for quick response in switching applications, enhancing overall efficiency.

Maximum Collector Current (IC): 0.2 A

The maximum collector current of 0.2 A ensures safe and stable operation within specified limits to prevent damage.

Maximum Turn Off Time (toff): 250 ns

The maximum turn-off time of 250 ns contributes to efficient switching operations and minimizes power loss.

Terminal Finish: TIN

The tin finish provides a reliable electrical connection and protects against corrosion, ensuring long-term performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in connection and circuit design, accommodating various configurations.

Nominal Transition Frequency (fT): 300 MHz

The high nominal transition frequency of 300 MHz allows for fast signal switching and high-speed performance in demanding applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMBT3904SH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

SMBT3904SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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