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2SD1815T-H

Onsemi

2SD1815T-H by Onsemi

The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 52,000 parts In-Stock

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Vyrian

USA . 10,458 parts In-Stock

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Digiode

USA . 496 parts In-Stock

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Native Components

USA . 245 parts In-Stock

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$0.121

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Northwest PG Solutions

USA . 1,278 parts In-Stock

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$0.133

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AZTECH Wire

Italy . 916 parts In-Stock

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$13.010

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Component Stockers USA

USA . 203 parts In-Stock

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$99.990

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TANS Electronics

Latvia . 5,979 parts In-Stock

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SupplyDigital Components

Austria . 5,015 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,617 parts In-Stock

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Problanco Electronics

Mexico . 2,503 parts In-Stock

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Corphita

USA . 1,427 parts In-Stock

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Kulean Microsystems

USA . 601 parts In-Stock

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Corohmni

South Africa . 217 parts In-Stock

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UHIMA Technologies

Türkiye . 124 parts In-Stock

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Overview

Discover the Onsemi 2SD1815T-H, a top-of-the-line NPN Bipolar Junction Transistor offering unparalleled quality and performance. Manufactured by Onsemi, a trusted name in the industry, this small signal BJT is perfect for a variety of applications. With a maximum power dissipation of 20W and a minimum DC current gain of 200, this transistor ensures reliable operation at temperatures up to 150 °C. Experience the superior value and benefits of the 2SD1815T-H, providing customers with a high-quality solution that delivers exceptional results every time.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various applications.

Configuration: SINGLE

Single configuration transistors are easier to work with in simpler circuit designs, making this product user-friendly for basic projects.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation, this transistor can handle more heat, allowing for efficient operation in high-power applications.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain ensures consistent and reliable amplification performance in circuits using this transistor.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this transistor to withstand heat and operate reliably in various environments.

Maximum Collector Current (IC): 3 A

A high maximum collector current rating makes this transistor suitable for applications requiring higher current loads, providing flexibility in circuit design.

Terminal Finish: TIN BISMUTH

The TIN BISMUTH terminal finish provides good solderability and reliability in terms of connections, ensuring stable performance in circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1815T-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-609 Code:

e6

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

2SD1815T-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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