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2SD1816T-TL-H

Onsemi

2SD1816T-TL-H by Onsemi

Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.

Median Price

$1.930

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 711 parts In-Stock

1+ parts

$1.930

100+ parts

$0.825

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711

$1.930

$0.825

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Mouser Electronics

USA . 213 parts In-Stock

1+ parts

$1.930

100+ parts

$0.825

1k+ parts

$0.589

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213

$1.930

$0.825

$0.589

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Verical

USA . 7,700 parts In-Stock

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$0.464

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7,700

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$0.464

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RS (Exports)

UK . 70 parts In-Stock

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70

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Digiode

USA . 1,196 parts In-Stock

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$1.273

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1,196

$1.273

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Chip Stock

USA . 37,000 parts In-Stock

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37,000

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Vyrian

USA . 10,686 parts In-Stock

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10,686

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Flip Electronics

USA . 2,800 parts In-Stock

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2,800

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Distributors (Availability)

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Native Components

USA . 558 parts In-Stock

1+ parts

$0.415

100+ parts

-

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$0.398

558

$0.415

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$0.398

Northwest PG Solutions

USA . 1,233 parts In-Stock

1+ parts

$0.457

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-

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$0.403

1,233

$0.457

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$0.403

Corphita

USA . 1,134 parts In-Stock

1+ parts

$1.206

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1,134

$1.206

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Corohmni

South Africa . 164 parts In-Stock

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$1.340

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164

$1.340

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QUARKTWIN TECHNOLOGY LTD

USA . 26,721 parts In-Stock

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26,721

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Kulean Microsystems

USA . 8,261 parts In-Stock

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8,261

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SupplyDigital Components

Austria . 7,900 parts In-Stock

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7,900

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Problanco Electronics

Mexico . 7,671 parts In-Stock

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7,671

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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5,880

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Lixinc

USA . 5,486 parts In-Stock

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5,486

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TANS Electronics

Latvia . 4,097 parts In-Stock

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4,097

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Glotronic Ltd.

UK . 2,900 parts In-Stock

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2,900

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UHIMA Technologies

Türkiye . 658 parts In-Stock

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658

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Kepictronics

USA . 405 parts In-Stock

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405

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Overview

Discover the superior performance and reliability of the 2SD1816T-TL-H by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor. With a focus on quality and precision engineering, Onsemi delivers cutting-edge technology for various applications like switching. Benefit from the NPN configuration, high DC current gain, and impressive power dissipation capabilities. Elevate your projects with this advanced transistor and experience the value it brings to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and inexpensive, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for various electronic designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and low power dissipation during on/off transitions.

Maximum Power Dissipation (Abs): 20 W

With a high power dissipation rating, this transistor can handle large loads without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 200

A high DC current gain ensures that small base currents can control larger collector currents, making this transistor efficient for amplification purposes.

Maximum Collector-Emitter Voltage: 100 V

The high maximum voltage rating allows for the transistor to be used in a variety of circuits without the risk of voltage breakdown.

Maximum Collector Current (IC): 4 A

With a high collector current rating, this transistor can handle heavy loads and operate at higher power levels, making it suitable for demanding applications.

Nominal Transition Frequency (fT): 180 MHz

The high transition frequency indicates that this transistor can switch at high speeds, making it ideal for high-frequency applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1816T-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

100 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2SD1816T-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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