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2SD1815S-TL-H

Onsemi

2SD1815S-TL-H by Onsemi

2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.

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3

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1k+

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USA . 302 parts In-Stock

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AZTECH Wire

Italy . 489 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,207 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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Overview

Experience superior performance and reliability with the 2SD1815S-TL-H by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Small Signal Bipolar Junction Transistors (BJT) like no other. Ideal for various applications, this NPN transistor offers a maximum power dissipation of 20W and a minimum DC current gain of 140, ensuring optimal functionality. With a maximum collector current of 3A and a peak reflow temperature of 260 °C, this product guarantees efficiency and longevity. Upgrade your electronics with the 2SD1815S-TL-H and enjoy unmatched value and benefits that only Onsemi can provide.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for audio amplifiers, signal processing, and other applications requiring amplification.

Configuration: SINGLE

Single configuration makes it easy to integrate this transistor into various electronic circuits without the need for additional components or complex setups.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing processes.

Maximum Power Dissipation (Abs): 20 W

With a high maximum power dissipation of 20W, this transistor can handle high power applications and provide reliable performance under load.

Minimum DC Current Gain (hFE): 140

A minimum DC current gain of 140 ensures that the transistor provides consistent and stable amplification of input signals, making it suitable for various electronic circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows for reliable operation in a wide range of environmental conditions, making it suitable for industrial and automotive applications.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle high current loads and is suitable for power amplification and switching applications.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish provides a reliable and durable connection, ensuring long-term performance and stability in various electronic circuits.

Maximum Time At Peak Reflow Temperature (s): 30

The short maximum time at peak reflow temperature of 30 seconds ensures efficient and safe assembly during the manufacturing process, reducing the risk of damage to the transistor.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes without degradation, ensuring reliable performance in surface mount applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1815S-TL-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

2SD1815S-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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