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DTC363EUT106

ROHM

DTC363EUT106 by ROHM

ROHM DTC363EUT106 is a NPN BJT with built-in resistor for switching applications. Features include 0.2W power dissipation, 20V collector-emitter voltage, and 200MHz transition frequency. Ideal for surface mount designs requiring small outline packages.

Median Price

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3

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1k+

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Vyrian

USA . 3,900 parts In-Stock

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3,900

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R&J Components

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Nova Conductors

Japan . 450 parts In-Stock

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450

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AZTECH Wire

Italy . 303 parts In-Stock

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$18.190

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303

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Ampacity Inc.

Singapore . 334 parts In-Stock

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$38.050

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334

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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Aranea Global

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Overview

Discover the innovative DTC363EUT106 by ROHM, a high-quality Small Signal Bipolar Junction Transistor with a NPN configuration and built-in resistor. Perfect for switching applications, this transistor offers reliable performance and efficiency. With a maximum collector current of 0.6A and a nominal transition frequency of 200MHz, this product provides incredible value and benefits to customers looking for durable and high-performing electronic components. Trust ROHM's reputation for excellence and choose the DTC363EUT106 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging ensures good insulation and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product versatile for various circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor convenient for smaller electronic devices.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for digital circuitry.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving time and effort during assembly.

Maximum Power Dissipation (Abs): 0.2 W

With a low power dissipation rating, this transistor can operate efficiently without overheating in various applications.

Minimum DC Current Gain (hFE): 70

A high DC current gain ensures reliable and consistent amplification of current in the transistor's operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance allows for stable performance even in demanding environmental conditions.

Maximum Collector-Emitter Voltage: 20 V

The high collector-emitter voltage rating provides protection against voltage spikes and enables safe operation in different voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer excellent performance, reliability, and temperature stability compared to other materials.

Maximum Collector Current (IC): 0.6 A

The high collector current rating enables the transistor to handle higher current levels, making it suitable for power applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides good conductivity and solderability, ensuring secure connections during installation.

Maximum Time At Peak Reflow Temperature (s): 10

The short time at peak reflow temperature ensures that the transistor is not exposed to excessive heat during soldering, preserving its performance.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can withstand the soldering process without any damage.

Nominal Transition Frequency (fT): 200 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation in electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC363EUT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

20 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

DTC363EUT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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