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DTA144EUAT106

ROHM

DTA144EUAT106 by ROHM

ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.

Median Price

$0.802

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Chip1Stop

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$0.064

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Verical

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$1.539

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Greenchips

USA . 3,000 parts In-Stock

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$0.026

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ACDS - Activité Composants Distribution Service

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Lantek

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NAC Semi

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R&J Components

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Vyrian

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Advanced Electronics

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$1.998

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$1.801

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AZTECH Wire

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Overview

Discover the DTA144EUAT106 by ROHM, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance in switching applications. With a PNP polarity and built-in resistor, this transistor is designed for efficiency and ease of use. Whether you're a hobbyist or a professional, this versatile component will streamline your projects and deliver reliable results. Trust ROHM's expertise and innovation to enhance your electronics with the DTA144EUAT106.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable or compact electronic devices.

Polarity or Channel Type: PNP

The PNP configuration allows for high efficiency in switching applications, making it suitable for a variety of electronic circuits.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, reducing overall component count.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and low power dissipation, making it energy-efficient.

Surface Mount: YES

The surface mount feature enables easy and efficient PCB assembly, saving time and effort during production.

Maximum VCEsat: 0.3 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to high efficiency and reduced power consumption.

Package Shape: RECTANGULAR

The rectangular package shape allows for a compact footprint on the PCB, ideal for space-constrained applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections and easy handling during assembly, ensuring reliable performance.

Maximum Power Dissipation (Abs): 0.2 W

The low power dissipation rating indicates minimal heat generation, enhancing the overall thermal performance and reliability of the transistor.

Package Style (Meter): SMALL OUTLINE

The small outline package style offers high density integration and efficient heat dissipation, making it suitable for compact electronic designs.

Maximum Power Dissipation Ambient: 0.2 W

The ambient power dissipation rating highlights the transistor's ability to operate efficiently in various environmental conditions, ensuring reliable performance.

Minimum DC Current Gain (hFE): 68

The high DC current gain provides sufficient amplification for signal processing applications, ensuring precise and stable signal amplification.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows the transistor to operate reliably in elevated temperature environments, increasing its versatility in different applications.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating provides a wide operating voltage range, making the transistor suitable for diverse circuit designs.

Transistor Element Material: SILICON

The silicon material ensures high performance and reliability, offering excellent thermal stability and switching characteristics.

Maximum Collector Current (IC): 0.1 A

The low collector current indicates low power consumption and heat dissipation, making the transistor energy-efficient and suitable for battery-powered devices.

Terminal Position: DUAL

The dual terminal position allows for versatile PCB layouts and easy connection to other components, enabling flexible circuit design.

Maximum Time At Peak Reflow Temperature (s): 10

The short reflow time at peak temperature ensures quick and efficient soldering during assembly, speeding up the production process.

Peak Reflow Temperature °C: 260

The high peak reflow temperature withstands the soldering process without damage, ensuring reliable connections and durability of the transistor.

Nominal Transition Frequency (fT): 250 MHz

The high nominal transition frequency indicates fast signal processing capabilities, making the transistor suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA144EUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA144EUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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