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DTA143EET1G

Onsemi

DTA143EET1G by Onsemi

Onsemi's DTA143EET1G is a PNP BJT transistor with 50V VCEO, 0.1A IC, and hFE of 15. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals. With built-in resistor, it can handle up to 0.15W power dissipation at 150°C max operating temp.

Median Price

$0.023

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 4,280 parts In-Stock

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$0.022

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$0.011

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4,280

$0.022

$0.011

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Mouser Electronics

USA . 260 parts In-Stock

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$0.180

100+ parts

$0.067

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$0.043

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$0.025

260

$0.180

$0.067

$0.043

$0.025

DigiKey

USA . 5,950 parts In-Stock

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$0.190

100+ parts

$0.070

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$0.045

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$0.031

5,950

$0.190

$0.070

$0.045

$0.031

Rochester

USA . 20,000 parts In-Stock

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-

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$0.024

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$0.024

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Flip Electronics (Authorized)

USA . 18,000 parts In-Stock

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Verical

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 4,280 parts In-Stock

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$0.018

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$0.018

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Distributors (In-Stock)

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Digiode

USA . 1,164 parts In-Stock

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$0.018

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Nova Conductors

Japan . 76 parts In-Stock

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76

$0.021

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Bristol Electronics

USA . 12,694 parts In-Stock

1+ parts

$0.098

100+ parts

$0.049

1k+ parts

$0.019

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$0.012

12,694

$0.098

$0.049

$0.019

$0.012

Flip Electronics

USA . 18,000 parts In-Stock

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NAC Semi

USA . 18,000 parts In-Stock

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Dan-Mar Components

USA . 12,694 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 12,000 parts In-Stock

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Vyrian

USA . 10,273 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10,179 parts In-Stock

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$0.009

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10,179

$0.009

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Corohmni

South Africa . 411 parts In-Stock

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$0.011

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411

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Corphita

USA . 896 parts In-Stock

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$0.017

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896

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Netroflash

USA . 1,000 parts In-Stock

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$0.021

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Perfect Parts

USA . 40,208 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,547 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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GreenTree Electronics

Israel . 21,000 parts In-Stock

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Lixinc

USA . 10,803 parts In-Stock

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Kepictronics

USA . 9,016 parts In-Stock

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SupplyDigital Components

Austria . 7,932 parts In-Stock

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Problanco Electronics

Mexico . 4,844 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 1,384 parts In-Stock

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TANS Electronics

Latvia . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 708 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the DTA143EET1G, a Small Signal Bipolar Junction Transistor designed for switching applications. With its PNP configuration and built-in resistor, this transistor offers unparalleled performance in a compact package. Perfect for a wide range of electronic projects, this transistor provides exceptional value and efficiency. Trust Onsemi for cutting-edge technology and innovative solutions that meet all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and thermal stability, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits, making it a versatile choice for different projects.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it ideal for compact applications.

Transistor Application: SWITCHING

With a focus on switching applications, this transistor offers fast response times and high efficiency in controlling current flow.

Surface Mount: YES

Being surface mountable, this transistor can be easily attached to PCBs, saving time and providing a more compact form factor.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on the PCB and helps optimize space utilization in tight layouts.

Terminal Form: GULL WING

The gull wing terminals provide secure connections and ease of soldering, ensuring reliable performance in various environments.

No. of Terminals: 3

With three terminals, this transistor offers flexibility in circuit connections and allows for different configurations to be implemented.

Maximum Power Dissipation (Abs): 0.15 W

The high maximum power dissipation rating ensures reliable operation under load, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for easy integration into tight spaces and enhances the overall portability of the device.

Minimum DC Current Gain (hFE): 15

With a minimum DC current gain of 15, this transistor provides consistent amplification of signals, ensuring accurate performance in different circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature range allows for reliable operation in a wide range of environmental conditions, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating provides a safety margin for applications with fluctuating voltage levels, ensuring long-term reliability.

Transistor Element Material: SILICON

Made of silicon, this transistor offers high performance and reliability, making it a durable choice for various electronic projects.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads with ease, making it suitable for various applications.

Terminal Finish: MATTE TIN

The matte tin finish on the terminals improves solderability and provides corrosion resistance, ensuring long-term reliability in different operating conditions.

Terminal Position: DUAL

The dual terminal position allows for versatile PCB layouts and enhances compatibility with different circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature of 30 seconds ensures proper soldering and reliability during manufacturing processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and adherence to industry standards, making it compatible with standard manufacturing processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA143EET1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DTA143EET1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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