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DTA144EETL

ROHM

DTA144EETL by ROHM

ROHM's DTA144EETL is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. The small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.255

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13

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Mouser Electronics

USA . 11,457 parts In-Stock

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$0.320

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$0.122

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$0.080

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$0.055

11,457

$0.320

$0.122

$0.080

$0.055

DigiKey

USA . 5,012 parts In-Stock

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$0.340

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$0.129

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$0.084

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$0.060

5,012

$0.340

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Verical

USA . 9,000 parts In-Stock

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Chip1Stop

Japan . 7,315 parts In-Stock

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$0.083

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$0.063

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$0.053

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$0.053

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Bristol Electronics

USA . 2,890 parts In-Stock

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$0.242

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$0.121

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$0.049

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Cyclops Electronics Ltd

UK . 44,875 parts In-Stock

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R&J Components

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Elcom Components

USA . 2,990 parts In-Stock

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Dan-Mar Components

USA . 2,890 parts In-Stock

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Speed Components Ltd

Israel . 2,785 parts In-Stock

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PC Components Company LLC

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Nova Conductors

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Rutronik

Germany . 90 parts In-Stock

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Ampacity Inc.

Singapore . 8,365 parts In-Stock

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$0.043

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CoreStaff

Japan . 249 parts In-Stock

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$0.090

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RC Electronics

USA . 132,454 parts In-Stock

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CPlus Electronics

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Metaverse IC Inc.

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Epart123

USA . 45,000 parts In-Stock

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GreenTree Electronics

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Perfect Parts

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Glotronic Ltd.

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Overview

Discover the cutting-edge DTA144EETL by ROHM, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a PNP configuration and built-in resistor, this transistor offers unparalleled performance and reliability. Its compact design and gull wing terminals make it ideal for space-constrained projects. Trust in ROHM's reputation for excellence and unlock the potential of your electronics with the DTA144EETL. Experience seamless functionality and efficiency like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the internal components.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplified circuit design by having the resistor already integrated into the transistor.

Transistor Application: SWITCHING

Optimized for switching applications, making it reliable and efficient for such tasks.

Surface Mount: YES

Easy to mount on PCBs, saving space and facilitating automated assembly processes.

Maximum VCEsat: 0.3 V

Low voltage drop across collector-emitter junction, reducing power loss and improving efficiency.

Package Shape: RECTANGULAR

Standard shape for easy integration into various circuits and PCB layouts.

Terminal Form: GULL WING

Designed for surface mounting, providing secure and reliable connections.

No. of Terminals: 3

Simplified connectivity with only 3 terminals to worry about.

Maximum Power Dissipation (Abs): 0.15 W

Can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications and efficient use of PCB real estate.

Maximum Power Dissipation Ambient: 0.15 W

Capable of dissipating heat effectively even in ambient conditions, maintaining performance.

Minimum DC Current Gain (hFE): 68

Consistent amplification of current signals with a minimum gain value for reliable performance.

Maximum Operating Temperature: 150 °C

Can operate under relatively high temperatures without performance degradation, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels to support a wide range of circuits and applications.

Transistor Element Material: SILICON

Silicon material with good electrical properties for efficient transistor operation.

Maximum Collector Current (IC): 0.1 A

Capable of carrying moderate current levels, suitable for many low-powered applications.

Terminal Position: DUAL

Dual terminal design for easy and secure connections in circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand peak reflow temperatures for a short duration during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable soldering and assembly processes.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTA144EETL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

68

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTA144EETL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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