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DTC114TUAT106

ROHM

DTC114TUAT106 by ROHM

ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.

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$0.046

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Overview

Unlock the power of cutting-edge technology with the DTC114TUAT106 by ROHM. Crafted by a renowned manufacturer, this NPN small signal bipolar junction transistor with built-in resistor is perfect for switching applications. With a low VCEsat and high DC current gain, this transistor offers unparalleled performance and efficiency. Its compact design and gull wing terminals make it ideal for surface mount applications. Trust ROHM to deliver quality and reliability in every component. Choose the DTC114TUAT106 for all your electronic needs and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Allows for currents to flow from the collector to the emitter, making it suitable for various electronic applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design and reduces the need for additional external components.

Transistor Application: SWITCHING

Designed for efficient switching applications, providing fast on/off transitions.

Surface Mount: YES

Allows for easy and space-saving installation on PCBs.

Maximum VCEsat: 0.3 V

Low collector-emitter saturation voltage helps in minimizing power loss in switching circuits.

Package Shape: RECTANGULAR

Fits well within standard PCB layouts and facilitates efficient soldering.

Terminal Form: GULL WING

Facilitates automated soldering processes and enhances reliability of connections.

No. of Terminals: 3

Simple interface with a limited number of connections, making it user-friendly.

Maximum Power Dissipation (Abs): 0.2 W

Can handle moderate power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Compact design suitable for applications with space constraints.

Maximum Power Dissipation Ambient: 0.2 W

Can operate at the specified power dissipation in various ambient conditions.

Minimum DC Current Gain (hFE): 100

Ensures stable and predictable amplification of input signals.

Maximum Operating Temperature: 150 °C

Can withstand high temperature environments without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

Can handle moderate voltage levels in various circuit configurations.

Transistor Element Material: SILICON

Provides reliable and consistent electrical characteristics over a wide temperature range.

Maximum Collector Current (IC): 0.1 A

Can carry moderate current levels for switching and amplification applications.

Terminal Position: DUAL

Provides flexibility in PCB layouts and connection options.

Maximum Time At Peak Reflow Temperature (s): 10

Can withstand the specified peak reflow temperature without damage within the specified time.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 250 MHz

Allows for high-frequency signal processing in communication and digital systems.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) DTC114TUAT106 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.2 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

DTC114TUAT106 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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