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MAT03FHZ

Analog Devices

MAT03FHZ by Analog Devices

MAT03FHZ by Analog Devices is a PNP BJT with 2 elements and built-in diode. It has a VCEsat of 0.1V, hFE of 80, and operates up to 150 °C. Ideal for amplifier applications due to its high transition frequency of 190MHz and low collector-emitter voltage of 36V.

Median Price

$30.000

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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DF Sales Co.

USA . 92 parts In-Stock

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DF Sales Co.

USA . 92 parts In-Stock

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Vyrian

USA . 3,388 parts In-Stock

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Digiode

USA . 749 parts In-Stock

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Chip Stock

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Prism Electronics

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Parana Technologies

USA . 25,974 parts In-Stock

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$1.334

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$1.240

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$1.334

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IDEA Electronic Components Group

UK . 581 parts In-Stock

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$1.434

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$1.362

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Semicontronic

India . 1,268 parts In-Stock

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$2.050

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$1.999

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$1.988

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DigiPath Technology Company

USA . 207 parts In-Stock

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$2.237

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$2.148

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AZTECH Wire

Italy . 862 parts In-Stock

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$12.377

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One Stop Electronics

USA . 1,252 parts In-Stock

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Authorized Procurement Solutions

USA . 2,800 parts In-Stock

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Corphita

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Microchip USA

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Perfect Parts

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Overview

Experience superior performance and reliability with the Analog Devices MAT03FHZ, a Small Signal Bipolar Junction Transistor perfect for amplifier applications. Manufactured by industry leader Analog Devices, this PNP transistor boasts exceptional quality and precision engineering. With a low VCEsat of 0.1V and a high DC current gain of 80, this transistor offers unmatched value and efficiency. Whether you're designing audio amplifiers or sensor circuits, the MAT03FHZ delivers exceptional performance, making it the ideal choice for your next project.

Feature Benefit Bullets

Package Body Material: METAL

Metal packaging provides good thermal conductivity and durability, ensuring optimal performance and longevity.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this product suitable for various amplification applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Having separate elements with a built-in diode allows for versatile circuit designs and simplifies the overall circuit layout.

Maximum VCEsat: 0.1 V

Low VCEsat reduces power losses and improves efficiency in amplifier applications.

Package Shape: ROUND

Round packaging is space-efficient and easy to mount in various types of circuits.

Terminal Form: WIRE

Wire terminals provide easy connectivity and are commonly used in prototyping and testing circuits.

No. of Elements: 2

Having two elements allows for more complex circuit configurations and amplification possibilities.

No. of Terminals: 6

Having six terminals provides flexibility in circuit connections and allows for various configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging is compact and easy to integrate into circuit designs.

Minimum DC Current Gain (hFE): 80

A minimum DC current gain of 80 ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures in demanding applications.

Maximum Collector-Emitter Voltage: 36 V

A maximum collector-emitter voltage of 36V allows for versatile circuit designs and applications.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and performance in electronic circuits.

Maximum Collector Current (IC): 0.02 A

With a maximum collector current of 0.02A, this transistor can handle moderate power levels in amplification circuits.

Terminal Finish: GOLD

Gold terminal finish ensures good conductivity and reliable connections in circuits.

Terminal Position: BOTTOM

Bottom terminal positioning is common in transistor packages and allows for easy mounting on circuit boards.

Nominal Transition Frequency (fT): 190 MHz

A high nominal transition frequency of 190 MHz enables this transistor to operate efficiently in audio and radio frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT03FHZ attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

36 V

Minimum DC Current Gain (hFE):

80

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

JESD-609 Code:

e4

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

GOLD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

MAT03FHZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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