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NSM46211DW6T1G

Onsemi

NSM46211DW6T1G by Onsemi

NSM46211DW6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a hFE of 200, Vce of 65V, and Ic of 0.1A. Ideal for switching applications, this surface-mount device comes in a small outline package with Gull Wing terminals.

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Component Stockers USA

USA . 221 parts In-Stock

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TANS Electronics

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SupplyDigital Components

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Kulean Microsystems

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Problanco Electronics

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Corphita

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Overview

Discover the NSM46211DW6T1G by Onsemi, a high-quality small signal BJT transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted industry leader, this NPN transistor is perfect for switching applications. With a built-in resistor and a maximum collector-emitter voltage of 65V, this transistor provides excellent value and versatility for your electronic projects. Its compact design and gull wing terminal form make it easy to integrate into your circuit board. Upgrade your electronics with the NSM46211DW6T1G and experience superior functionality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, making it suitable for a variety of electronic applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile for different circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB by eliminating the need for an external resistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures reliable and efficient performance in circuits that require rapid on/off switching.

Surface Mount: YES

The surface mount capability allows for easy installation on PCBs using automated assembly processes, making it ideal for mass production.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor that is easy to work with and fits well in various circuit layouts.

Minimum DC Current Gain (hFE): 200

The high minimum current gain ensures consistent and stable amplification in the circuit, improving overall performance and reliability.

Maximum Collector-Emitter Voltage: 65 V

The high maximum voltage rating allows for safe operation in circuits with higher voltage requirements, providing a wider range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for a wide range of electronic devices and applications.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating of 0.1 A ensures safe operation within the specified limits, protecting the transistor from damage due to excessive current.

Terminal Finish: TIN

The tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections in the circuit and extending the lifespan of the transistor.

Terminal Position: DUAL

The dual terminal position allows for flexibility in the placement of the transistor on the PCB, making it easier to integrate into different circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature of 30 seconds minimizes thermal stress on the transistor during soldering, preventing potential damage to the device.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C ensures reliable and consistent solder joints, improving the overall quality of the assembly and long-term performance of the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSM46211DW6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1.0

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSM46211DW6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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