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NSM11156DW6T1G

Onsemi

NSM11156DW6T1G by Onsemi

NSM11156DW6T1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface-mount device in a small outline package is designed for high-speed operations in various electronic circuits.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 330,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

330,000

-

$0.030

$0.025

$0.023

Farnell

UK . 330,000 parts In-Stock

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330,000

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Distributors (In-Stock)

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Digiode

USA . 335 parts In-Stock

1+ parts

$0.024

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335

$0.024

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Vyrian

USA . 7,552 parts In-Stock

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7,552

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Distributors (Availability)

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Corphita

USA . 154 parts In-Stock

1+ parts

$0.022

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154

$0.022

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Corohmni

South Africa . 443 parts In-Stock

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$0.025

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443

$0.025

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Component Stockers USA

USA . 469,909 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

469,909

$0.030

$0.020

$0.020

$0.020

AZTECH Wire

Italy . 131 parts In-Stock

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$17.860

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131

$17.860

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Continental Prestige Electronics

USA . 330,000 parts In-Stock

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$0.010

330,000

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$0.010

QUARKTWIN TECHNOLOGY LTD

USA . 25,187 parts In-Stock

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SupplyDigital Components

Austria . 7,832 parts In-Stock

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7,832

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Kulean Microsystems

USA . 4,789 parts In-Stock

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4,789

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Problanco Electronics

Mexico . 4,204 parts In-Stock

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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752

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TANS Electronics

Latvia . 409 parts In-Stock

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409

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Overview

Discover the NSM11156DW6T1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor that offers unparalleled performance and reliability. With its PNP polarity and switching application, this transistor is perfect for a wide range of electronic devices. Onsemi's reputation for excellence in semiconductor manufacturing ensures that you're getting a product that meets the highest industry standards. Experience the value and benefits of this transistor with its built-in resistor, gull wing terminal form, and small outline package style. Upgrade your electronics with the NSM11156DW6T1G and see the difference in performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into circuits that require PNP transistors.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration provides flexibility in circuit design and simplifies the overall layout with built-in resistors.

Transistor Application: SWITCHING

Ideal for applications that require fast switching speeds and low power consumption.

Surface Mount: YES

Suitable for surface mount technology, enabling efficient PCB assembly and saving space.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement on the PCB and efficient use of board space.

Terminal Form: GULL WING

The gull wing terminal form is suitable for surface mounting, providing secure connections.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations and versatility.

No. of Terminals: 6

More terminals provide flexibility in connecting the transistor to other components in the circuit.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 35

Having a minimum DC current gain of 35 ensures reliable amplification in various circuit applications.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low-power applications where a collector-emitter voltage of up to 50V is required.

Transistor Element Material: SILICON

Silicon material ensures high performance, reliability, and stability in different operating conditions.

Maximum Collector Current (IC): 0.1 A

Capable of handling collector currents of up to 0.1A, making it suitable for low-power applications.

Terminal Finish: TIN

Tin terminal finish provides good electrical conductivity and solderability for reliable connections.

Terminal Position: DUAL

Dual terminal positions offer flexibility in mounting and connecting the transistor in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds during the assembly process.

Peak Reflow Temperature °C: 260

Designed to withstand peak reflow temperatures of up to 260 °C, ensuring reliable solder connections.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSM11156DW6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1.0

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

35

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSM11156DW6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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