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NSBC143EPDP6T5G

Onsemi

NSBC143EPDP6T5G by Onsemi

NSBC143EPDP6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max power dissipation of 0.408W, hFE of 15, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.

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Component Stockers USA

USA . 96,762 parts In-Stock

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$0.750

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AZTECH Wire

Italy . 638 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 15,963 parts In-Stock

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Kepictronics

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TANS Electronics

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SupplyDigital Components

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Problanco Electronics

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Kulean Microsystems

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Corphita

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UHIMA Technologies

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Overview

Discover the power of the NSBC143EPDP6T5G by Onsemi, a top-tier manufacturer known for delivering high-quality Small Signal Bipolar Junction Transistors. Designed for switching applications, this NPN and PNP transistor offers unparalleled performance with its built-in resistor configuration, allowing for seamless integration into various electronic devices. With a maximum collector-emitter voltage of 50V and a maximum collector current of 0.1A, this transistor guarantees reliable operation even in high-temperature environments up to 150 °C. Trust Onsemi's expertise and experience to bring you cutting-edge technology that meets your specific needs. Elevate your projects with the NSBC143EPDP6T5G and experience unmatched performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This package material makes the transistor lightweight and durable, suitable for various electronic applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and compatibility with different configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and can help in reducing external component count, making it more space-efficient.

Transistor Application: SWITCHING

Designed for switching applications, providing fast response times and efficient switching performance in electronic circuits.

Surface Mount: YES

Being surface mountable enables easy and effective PCB assembly, saving space and allowing for high-density mounting.

Maximum Power Dissipation (Abs): 0.408 W

With a relatively high power dissipation capability, this transistor can handle moderate power levels without overheating.

Package Shape: RECTANGULAR

The rectangular shape of the package provides convenient mounting options and easy integration into different electronic systems.

Minimum DC Current Gain (hFE): 15

A higher minimum DC current gain ensures reliable amplification and signal processing in various circuit applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures and maintain stable performance.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for versatility in circuit design and compatibility with different voltage levels.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1 A of collector current, suitable for low to moderate current applications in electronic circuits.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

The specified maximum time at peak reflow temperature ensures proper soldering and reflow process compatibility during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability allows for reliable soldering and assembly processes without compromising the transistor's performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSBC143EPDP6T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO 1.0

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

15

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSBC143EPDP6T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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