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NSM21356DW6T1G

Onsemi

NSM21356DW6T1G by Onsemi

NSM21356DW6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a hFE of 80, Vce of 50V, and Ic of 0.1A. Ideal for switching applications, it comes in a rectangular package with Gull Wing terminals for surface mount assembly.

Median Price

$0.034

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 321,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

321,000

-

$0.030

$0.025

$0.023

Verical

USA . 321,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.038

321,000

-

-

-

$0.038

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 714 parts In-Stock

1+ parts

$0.024

100+ parts

-

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-

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-

714

$0.024

-

-

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Vyrian

USA . 3,527 parts In-Stock

1+ parts

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3,527

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-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,193 parts In-Stock

1+ parts

$0.022

100+ parts

-

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2,193

$0.022

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-

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Corohmni

South Africa . 74 parts In-Stock

1+ parts

$0.025

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-

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74

$0.025

-

-

-

Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.693

100+ parts

$0.631

1k+ parts

$0.568

10k+ parts

-

50

$0.693

$0.631

$0.568

-

AZTECH Wire

Italy . 200 parts In-Stock

1+ parts

$16.760

100+ parts

-

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200

$16.760

-

-

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Continental Prestige Electronics

USA . 321,000 parts In-Stock

1+ parts

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100+ parts

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$0.010

321,000

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-

-

$0.010

Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Kulean Microsystems

USA . 5,820 parts In-Stock

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5,820

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SupplyDigital Components

Austria . 5,353 parts In-Stock

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5,353

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TANS Electronics

Latvia . 4,466 parts In-Stock

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4,466

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Problanco Electronics

Mexico . 2,954 parts In-Stock

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2,954

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UHIMA Technologies

Türkiye . 81 parts In-Stock

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81

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Overview

Discover the versatile NSM21356DW6T1G by Onsemi - a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With its NPN and PNP configurations, this transistor offers seamless performance and reliability. Manufactured by Onsemi, a trusted name in semiconductor technology, this product boasts a built-in resistor and a maximum collector-emitter voltage of 50V, making it ideal for a wide range of electronic projects. Experience the convenience of surface mount compatibility and the benefits of a small outline package style. Upgrade your designs with the NSM21356DW6T1G and unlock endless possibilities in electronics innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile applications in various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for small signal switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to mount on PCBs, saving assembly time and allowing for automated production processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on a circuit board while maximizing space utilization.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and easy soldering during assembly.

No. of Elements: 2

Having 2 elements allows for more complex circuit configurations, offering flexibility in design.

No. of Terminals: 6

6 terminals provide multiple connection points, enhancing connectivity options in the circuit.

Minimum DC Current Gain (hFE): 80

High minimum DC current gain ensures consistent and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating, this transistor can handle higher voltage loads, adding to its versatility.

Transistor Element Material: SILICON

Silicon material offers good thermal stability and high conductivity, ensuring efficient operation of the transistor.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1 A allows for handling moderate current loads, making it suitable for various applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit design and allows for different mounting orientations.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor can withstand high-temperature soldering processes without damage.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and reliability during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSM21356DW6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NSM21356DW6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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