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Small Signal Bipolar Junction Transistors (BJT)

Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.

Small Signal BJTs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

Proper use of Small Signal BJTs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal BJTs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.B395

Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,001

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MMBT4401-7 by Diodes Incorporated

MMBT4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 40;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMBTA42-7 by Diodes Incorporated

MMBTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; JESD-609 Code: e0;

.5 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMBT4403-7 by Diodes Incorporated

MMBT4403-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Qualification: Not Qualified;

.6 A

40 V

SINGLE

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

MMBT5401-7 by Diodes Incorporated

MMBT5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBT5551-7 by Diodes Incorporated

MMBT5551-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

.2 A

160 V

SINGLE

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBTA13-7 by Diodes Incorporated

MMBTA13-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;

.3 A

30 V

DARLINGTON

10000

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA14-7 by Diodes Incorporated

MMBTA14-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;

.3 A

30 V

DARLINGTON

20000

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA63-7 by Diodes Incorporated

MMBTA63-7

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;

.5 A

30 V

DARLINGTON

10000

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA64-7 by Diodes Incorporated

MMBTA64-7

Diodes Incorporated

PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;

.5 A

30 V

DARLINGTON

20000

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

125 MHz

MMBTA92-7 by Diodes Incorporated

MMBTA92-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

300 V

SINGLE

25

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMDT2222A-7 by Diodes Incorporated

MMDT2222A-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 285 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMDT2907A-7 by Diodes Incorporated

MMDT2907A-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;

.6 A

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

100 ns

45 ns

MMST2222A-7 by Diodes Incorporated

MMST2222A-7

Diodes Incorporated

Diodes Incorporated MMST2222A-7 is a NPN BJT transistor with hFE of 40, VCE of 40V, and IC of 0.6A. Ideal for high-frequency applications up to 300MHz with fast ton of 35ns and toff of 285ns. Suitable for surface mount designs in small outline packages.

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMBTA55-7 by Diodes Incorporated

MMBTA55-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMBTA56-7 by Diodes Incorporated

MMBTA56-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMST6427-7 by Diodes Incorporated

MMST6427-7

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 40 V; No. of Terminals: 3;

.5 A

40 V

DARLINGTON

14000

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DDTA114ECA-7 by Diodes Incorporated

DDTA114ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

BUILT IN BIAS RESISTANCE RATIO IS 1

.05 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123ECA-7 by Diodes Incorporated

DDTA123ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA143ECA-7 by Diodes Incorporated

DDTA143ECA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN LEAD;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

MMDT3946-7 by Diodes Incorporated

MMDT3946-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT4401-7 by Diodes Incorporated

MMDT4401-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMSTA42-7 by Diodes Incorporated

MMSTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;

.2 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMSTA55-7 by Diodes Incorporated

MMSTA55-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 100;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMSTA92-7 by Diodes Incorporated

MMSTA92-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

300 V

SINGLE

25

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMDT4124-7 by Diodes Incorporated

MMDT4124-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMDT5551-7 by Diodes Incorporated

MMDT5551-7

Diodes Incorporated

MMDT5551-7 by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. It has a min hFE of 30 and max VCE of 160V. With a fT of 100MHz, this transistor comes in a small outline package suitable for surface mount assembly.

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMST5401-7 by Diodes Incorporated

MMST5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMSTA05-7 by Diodes Incorporated

MMSTA05-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMSTA06-7 by Diodes Incorporated

MMSTA06-7

Diodes Incorporated

Diodes Inc.'s MMSTA06-7 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for switching applications, it operates up to 150°C with fT of 100MHz. Its small outline package makes it suitable for surface mount designs.

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5401-7 by Diodes Incorporated

MMDT5401-7

Diodes Incorporated

MMDT5401-7 by Diodes Inc. is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 50, Vce of 150V, and fT of 100MHz. This surface-mount device in a small outline package features Gull Wing terminals and silicon material for efficient performance.

.2 A

150 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5451-7 by Diodes Incorporated

MMDT5451-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMST3904-7 by Diodes Incorporated

MMST3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: Tin/Lead (Sn/Pb);

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

Not Qualified

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

300 MHz

70 ns

MMST3906-7 by Diodes Incorporated

MMST3906-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

300 ns

70 ns

MMST4124-7 by Diodes Incorporated

MMST4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMST4126-7 by Diodes Incorporated

MMST4126-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

MMST4401-7 by Diodes Incorporated

MMST4401-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Package Shape: RECTANGULAR;

.6 A

40 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

255 ns

35 ns

MMDT4413-7 by Diodes Incorporated

MMDT4413-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn On Time (ton): 35 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMBTA05-7 by Diodes Incorporated

MMBTA05-7

Diodes Incorporated

Diodes Inc.'s MMBTA05-7 is a NPN BJT transistor with hFE of 100, VCE of 60V, and IC of 0.5A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With fT at 100MHz, it's commonly used in isolated case connections.

ISOLATED

.5 A

60 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBTA06-7 by Diodes Incorporated

MMBTA06-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;

ISOLATED

.5 A

80 V

SINGLE

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT4403-7 by Diodes Incorporated

MMDT4403-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 6;

.6 A

40 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

STX790A by STMicroelectronics

STX790A

STMicroelectronics

STX790A by STMicroelectronics is a PNP small signal BJT designed for switching applications. It features a max power dissipation of 0.9W, operates up to 150 °C, and supports collector currents of 3A. Its compact cylindrical package ensures efficient performance in various electronic circuits.

3 A

30 V

SINGLE

90

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.9 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

400 ns

430 ns

BC847BPDXV6T1 by Onsemi

BC847BPDXV6T1

Onsemi

BC847BPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates up to 150 °C, with max collector-emitter voltage of 45V and transition frequency of 100MHz.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC858CDXV6T5 by Onsemi

BC858CDXV6T5

Onsemi

BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

100 MHz

NST3904DXV6T5 by Onsemi

NST3904DXV6T5

Onsemi

The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T1 by Onsemi

NST3946DXV6T1

Onsemi

NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T5 by Onsemi

NST3946DXV6T5

Onsemi

NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NSBA113EDXV6T1 by Onsemi

NSBA113EDXV6T1

Onsemi

NSBA113EDXV6T1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and max. collector-emitter voltage of 50V. Ideal for switching applications, it has a small outline package style, flat terminals, and can handle up to 0.1A collector current.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

3

R-PDSO-F6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

NSBA114TDXV6T1 by Onsemi

NSBA114TDXV6T1

Onsemi

NSBA114TDXV6T1 by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.5W, hFE of 160, and VCE of 50V. Ideal for switching applications, this surface-mount device comes in a small outline package with dual terminals.

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-F6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

SWITCHING

SILICON