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BC858CDXV6T5

Onsemi

BC858CDXV6T5 by Onsemi

BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,673 parts In-Stock

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Digiode

USA . 2,484 parts In-Stock

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AZTECH Wire

Italy . 371 parts In-Stock

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$21.610

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371

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Problanco Electronics

Mexico . 5,075 parts In-Stock

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SupplyDigital Components

Austria . 4,472 parts In-Stock

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Corphita

USA . 2,232 parts In-Stock

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Northwest PG Solutions

USA . 1,714 parts In-Stock

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TANS Electronics

Latvia . 1,414 parts In-Stock

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UHIMA Technologies

Türkiye . 638 parts In-Stock

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Native Components

USA . 591 parts In-Stock

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Corohmni

South Africa . 454 parts In-Stock

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Kulean Microsystems

USA . 377 parts In-Stock

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Overview

Enhance your electronic designs with the BC858CDXV6T5 by Onsemi. Manufactured with top-quality materials, this PNP small signal bipolar junction transistor offers superior performance in amplifier applications. With a maximum operating temperature of 150 °C and a nominal transition frequency of 100 MHz, this transistor ensures reliability and efficiency. Trust Onsemi's reputation for excellence and choose the BC858CDXV6T5 for your next project to experience unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are required.

Configuration: SEPARATE, 2 ELEMENTS

Allows for flexibility in circuit design and functionality.

Transistor Application: AMPLIFIER

Ideal for use in amplifier circuits for signal amplification.

Surface Mount: YES

Enables easy and convenient PCB mounting.

Package Shape: RECTANGULAR

Provides a compact form factor for space-saving designs.

Maximum Power Dissipation (Abs): 0.5 W

Can handle moderate power dissipation levels without overheating.

Minimum DC Current Gain (hFE): 420

Ensures high gain for amplification applications.

Maximum Operating Temperature: 150 °C

Can operate reliably at high temperatures.

Maximum Collector-Emitter Voltage: 30 V

Suitable for low to moderate voltage applications.

Transistor Element Material: SILICON

Provides good electrical properties and reliability for signal processing.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels.

Terminal Finish: TIN

Ensures good electrical contact and solderability.

Nominal Transition Frequency (fT): 100 MHz

Provides good frequency response for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858CDXV6T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858CDXV6T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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