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MMDT5401-7

Diodes Incorporated

MMDT5401-7 by Diodes Incorporated

MMDT5401-7 by Diodes Inc. is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 50, Vce of 150V, and fT of 100MHz. This surface-mount device in a small outline package features Gull Wing terminals and silicon material for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 17,030 parts In-Stock

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17,030

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Corohmni

South Africa . 16 parts In-Stock

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$0.314

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16

$0.314

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Aztec Data Supply Inc.

USA . 202 parts In-Stock

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$1.580

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AZTECH Wire

Italy . 205 parts In-Stock

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$11.333

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Semicontronic

India . 288 parts In-Stock

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$18.050

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$17.599

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$17.508

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288

$18.050

$17.599

$17.508

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Ampacity Inc.

Singapore . 1,547 parts In-Stock

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$58.050

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$58.050

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Continental Prestige Electronics

USA . 3,507 parts In-Stock

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Argo Parts USA

USA . 2,371 parts In-Stock

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Looking for a reliable and high-quality solution for your small signal bipolar junction transistor needs? Look no further than the MMDT5401-7 by Diodes Incorporated! This PNP transistor offers separate, 2 elements in a compact rectangular package with gull wing terminals for easy surface mounting. Ideal for switching applications, this transistor has a minimum DC current gain of 50 and a maximum collector-emitter voltage of 150V. With a nominal transition frequency of 100 MHz, this transistor is perfect for a wide range of electronic projects. Trust Diodes Incorporated for top-notch components that deliver exceptional performance every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

Suitable for applications requiring PNP transistors, offering versatility in circuit design.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, enhancing functionality in switching applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easily mountable on PCBs, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Offers a compact form factor, ideal for space-constrained applications.

Terminal Form: GULL WING

Facilitates easy soldering onto PCBs, ensuring a secure and reliable connection.

Minimum DC Current Gain (hFE): 50

Consistent gain ensures stable amplification and switching characteristics.

Maximum Collector-Emitter Voltage: 150 V

Suitable for applications requiring higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon transistors provide better performance and reliability compared to other materials.

Maximum Collector Current (IC): 0.2 A

Able to handle moderate current levels, making it suitable for various low-power applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and conductivity for reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in mounting and connection options.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for faster switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT5401-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMDT5401-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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