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MMDT5401-7-F

Diodes Incorporated

MMDT5401-7-F by Diodes Incorporated

MMDT5401-7-F by Diodes Inc. is a PNP BJT with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 150V, max collector current of 0.2A, and min DC current gain of 50. With a package style of small outline and surface mount capability, it operates at up to 150°C.

Median Price

$0.234

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 3,000 parts In-Stock

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$0.044

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3,000

$0.044

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Arrow

USA . 3,000 parts In-Stock

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$0.396

100+ parts

$0.154

1k+ parts

$0.107

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3,000

$0.396

$0.154

$0.107

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Mouser Electronics

USA . 1,572 parts In-Stock

1+ parts

$0.470

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$0.196

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$0.115

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1,572

$0.470

$0.196

$0.115

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Verical

USA . 33,000 parts In-Stock

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$0.073

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$0.073

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

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$0.134

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100

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Forefront Electronics and Design

USA . 6 parts In-Stock

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$0.490

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$0.490

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NAC Semi

USA . 282,000 parts In-Stock

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IBS Electronics

USA . 153,000 parts In-Stock

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Vyrian

USA . 62,025 parts In-Stock

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Chip Stock

USA . 45,000 parts In-Stock

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Sunrise Surplus Inc.

USA . 18,000 parts In-Stock

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Rutronik

Germany . 3,000 parts In-Stock

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$0.063

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$0.063

Ack Elektronik San.Tic.Ltd.Sti

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NPI Materials, Inc.

USA . 2,900 parts In-Stock

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2,900

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PC Components Company LLC

USA . 1,996 parts In-Stock

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Bristol Electronics

USA . 1,996 parts In-Stock

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ComSIT Distribution GmbH

Germany . 699 parts In-Stock

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699

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Prism Electronics

USA . 131 parts In-Stock

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SPM Sales

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Semicontronic

India . 104,566 parts In-Stock

1+ parts

$0.033

100+ parts

$0.032

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$0.032

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104,566

$0.033

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$0.032

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Ampacity Inc.

Singapore . 62,752 parts In-Stock

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$0.033

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62,752

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Corohmni

South Africa . 298 parts In-Stock

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$0.095

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Continental Prestige Electronics

USA . 4,854 parts In-Stock

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Argo Parts USA

USA . 3,532 parts In-Stock

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$0.134

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$0.130

3,532

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Aztec Data Supply Inc.

USA . 1,590 parts In-Stock

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$1.874

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$1.874

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 157,743 parts In-Stock

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Perfect Parts

USA . 133,371 parts In-Stock

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GreenTree Electronics

Israel . 96,000 parts In-Stock

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Lixinc

USA . 13,411 parts In-Stock

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Robosynatics

Brazil . 7,420 parts In-Stock

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$0.093

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$0.091

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$0.091

Lucentia Tech

USA . 7,420 parts In-Stock

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$0.093

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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iodParts Technologies Inc.

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Eastek

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Component Stockers USA

USA . 2,970 parts In-Stock

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Glotronic Ltd.

UK . 2,700 parts In-Stock

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Futuretech Components

Singapore . 958 parts In-Stock

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Overview

Experience the power of innovation with the MMDT5401-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality small signal bipolar junction transistors that are perfect for switching applications. With a sleek rectangular package design and dual elements, this PNP transistor offers high performance and reliability. Trust in Diodes Incorporated to provide you with cutting-edge technology that exceeds your expectations. Upgrade your electronic projects with the MMDT5401-7-F and elevate your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, ideal for electronic components

Polarity or Channel Type: PNP

Useful for applications where PNP transistors are required

Configuration: SEPARATE, 2 ELEMENTS

Provides versatility and flexibility in circuit design

Transistor Application: SWITCHING

Suitable for switching applications in electronic circuits

Surface Mount: YES

Allows for easy installation on circuit boards

Package Shape: RECTANGULAR

Space-efficient design for compact electronic devices

Terminal Form: GULL WING

Provides secure solder connection for reliability

No. of Element: 2

Two separate elements for different circuit configurations

No. of Terminals: 6

Sufficient terminals for connection in circuits

Maximum Power Dissipation (Abs): 0.2 W

Able to handle moderate power levels in operation

Package Style (Meter): SMALL OUTLINE

Compact package size for space-constrained applications

Minimum DC Current Gain (hFE): 50

Provides consistent amplification of current in circuits

Maximum Operating Temperature: 150 °C

Can operate reliably in moderate temperature environments

Maximum Collector-Emitter Voltage: 150 V

Handles high voltage levels for various applications

Transistor Element Material: SILICON

High-quality material for reliable transistor performance

Maximum Collector Current (IC): 0.2 A

Sufficient current handling capacity for many circuits

Terminal Finish: MATTE TIN

Durable finish for long-term solder connection

Terminal Position: DUAL

Dual terminal layout for ease of circuit connection

Maximum Time At Peak Reflow Temperature (s): 30

Allows for safe and effective solder reflow process

Peak Reflow Temperature °C: 260

High reflow temperature capability for proper soldering

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications in circuits

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT5401-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMDT5401-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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