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MMDT5551-7

Diodes Incorporated

MMDT5551-7 by Diodes Incorporated

MMDT5551-7 by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. It has a min hFE of 30 and max VCE of 160V. With a fT of 100MHz, this transistor comes in a small outline package suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 16,557 parts In-Stock

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16,557

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Semi Source

USA . 2,650 parts In-Stock

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2,650

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Prism Electronics

USA . 185 parts In-Stock

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185

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Ampacity Inc.

Singapore . 1,121 parts In-Stock

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$1.050

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1,121

$1.050

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Corohmni

South Africa . 667 parts In-Stock

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$1.354

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667

$1.354

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Aztec Data Supply Inc.

USA . 265 parts In-Stock

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$1.500

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265

$1.500

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AZTECH Wire

Italy . 737 parts In-Stock

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$9.661

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737

$9.661

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Continental Prestige Electronics

USA . 6,805 parts In-Stock

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Argo Parts USA

USA . 4,637 parts In-Stock

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4,637

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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Advanced Electronics

New Zealand . 1,100 parts In-Stock

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1,100

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Perfect Parts

USA . 243 parts In-Stock

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243

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Bastille Electronics

Australia . 40 parts In-Stock

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40

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Overview

Looking for a reliable Small Signal BJT? Look no further than the MMDT5551-7 by Diodes Incorporated. With a reputation for top-quality components, Diodes Inc. delivers exceptional performance in switching applications with this NPN transistor. Its compact design and high DC current gain make it a versatile choice for various electronic projects. Trust Diodes Inc. to provide you with the value and reliability you need to bring your designs to life. Get your hands on the MMDT5551-7 today and experience the difference for yourself!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering a high input impedance and fast switching speeds.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in electronic circuits that require fast on/off transitions.

Surface Mount: YES

Facilitates easy and efficient assembly on circuit boards, saving space and simplifying manufacturing processes.

Maximum Collector-Emitter Voltage: 160 V

Suitable for circuits that require higher voltage handling capabilities, offering a wide range of applications in electronic devices.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for high-speed switching performance, making it ideal for applications that require rapid signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT5551-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMDT5551-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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