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MMDT5551-7-F

Diodes Incorporated

MMDT5551-7-F by Diodes Incorporated

MMDT5551-7-F by Diodes Inc. is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a max collector-emitter voltage of 160V, max collector current of 0.2A, and min DC current gain of 30. With a package style of small outline and peak reflow temp of 260°C, it's suitable for surface mount designs.

Median Price

$0.116

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 96,564 parts In-Stock

1+ parts

$0.386

100+ parts

$0.159

1k+ parts

$0.110

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96,564

$0.386

$0.159

$0.110

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Mouser Electronics

USA . 2,500 parts In-Stock

1+ parts

$0.470

100+ parts

$0.196

1k+ parts

$0.115

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$0.062

2,500

$0.470

$0.196

$0.115

$0.062

Verical

USA . 114,000 parts In-Stock

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$0.057

114,000

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$0.057

DigiKey

USA . 7,657 parts In-Stock

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$0.072

7,657

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$0.072

Farnell

UK . 6,259 parts In-Stock

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-

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$0.116

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$0.087

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$0.077

6,259

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$0.116

$0.087

$0.077

Element14

Singapore . 259 parts In-Stock

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$0.217

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$0.143

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$0.141

259

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$0.141

Arrow

USA . 49 parts In-Stock

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$0.045

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49

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$0.045

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Distributors (In-Stock)

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Nova Conductors

Japan . 53 parts In-Stock

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$0.171

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53

$0.171

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Component Electronics Inc.

Canada . 402 parts In-Stock

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$0.230

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$0.170

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$0.150

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402

$0.230

$0.170

$0.150

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TME

Poland . 119 parts In-Stock

1+ parts

$0.310

100+ parts

$0.141

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$0.093

10k+ parts

$0.071

119

$0.310

$0.141

$0.093

$0.071

Maritex

Poland . 119 parts In-Stock

1+ parts

$1.082

100+ parts

$0.250

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$0.167

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$0.129

119

$1.082

$0.250

$0.167

$0.129

IBS Electronics

USA . 690,000 parts In-Stock

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$0.041

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$0.041

NAC Semi

USA . 327,000 parts In-Stock

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$0.085

327,000

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$0.085

Vyrian

USA . 82,920 parts In-Stock

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Chip Stock

USA . 30,500 parts In-Stock

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Bristol Electronics

USA . 9,000 parts In-Stock

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9,000

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Rutronik

Germany . 3,000 parts In-Stock

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$0.061

3,000

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$0.061

Prism Electronics

USA . 2,955 parts In-Stock

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2,955

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LWI Electronics Inc

India . 2,140 parts In-Stock

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Ashlea Components Ltd

UK . 1,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 973 parts In-Stock

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973

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Distributors (Availability)

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Semicontronic

India . 85,013 parts In-Stock

1+ parts

$0.034

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$0.033

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$0.033

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85,013

$0.034

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$0.033

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Ampacity Inc.

Singapore . 82,967 parts In-Stock

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$0.034

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82,967

$0.034

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Argo Parts USA

USA . 4,395 parts In-Stock

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$0.171

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$0.165

4,395

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$0.165

Netroflash

USA . 500 parts In-Stock

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$0.171

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500

$0.171

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Modulus Dynamics

Lithuania . 5,760 parts In-Stock

1+ parts

$0.367

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$0.367

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$0.367

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5,760

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Continental Prestige Electronics

USA . 65,494 parts In-Stock

1+ parts

$0.418

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$0.155

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$0.079

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$0.052

65,494

$0.418

$0.155

$0.079

$0.052

Corohmni

South Africa . 1,041 parts In-Stock

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$0.541

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Aztec Data Supply Inc.

USA . 4,715 parts In-Stock

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$0.650

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GreenTree Electronics

Israel . 474,000 parts In-Stock

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Kepictronics

USA . 180,864 parts In-Stock

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Glotronic Ltd.

UK . 62,100 parts In-Stock

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Authorized Procurement Solutions

USA . 60,000 parts In-Stock

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Perfect Parts

USA . 23,933 parts In-Stock

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Robosynatics

Brazil . 19,190 parts In-Stock

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Lucentia Tech

USA . 19,190 parts In-Stock

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$1.867

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$1.829

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$1.829

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$1.867

$1.829

$1.829

iodParts Technologies Inc.

India . 13,460 parts In-Stock

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Futuretech Components

Singapore . 9,000 parts In-Stock

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Lixinc

USA . 3,516 parts In-Stock

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Advanced Electronics

New Zealand . 870 parts In-Stock

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Overview

Upgrade your electronics with the MMDT5551-7-F by Diodes Incorporated, a top-quality small signal bipolar junction transistor that offers reliable performance and versatility. Manufactured by industry leader Diodes Incorporated, this NPN transistor is perfect for switching applications. With a maximum power dissipation of 0.2W and a maximum operating temperature of 150°C, this transistor delivers exceptional value and efficiency. Whether you're a hobbyist or a professional, the MMDT5551-7-F provides the perfect solution for your electronic projects. Elevate your designs with this high-performance transistor today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, ensuring a long lifespan.

Polarity or Channel Type: NPN

Suitable for use in a wide range of electronic circuits and applications, offering versatility and compatibility.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control and operation of each element, offering flexibility in circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering reliable and efficient performance in these scenarios.

Surface Mount: YES

Enables easy integration onto PCBs, saving space and simplifying assembly processes.

Maximum Power Dissipation (Abs): 0.2 W

Can handle up to 0.2 watts of power dissipation, suitable for low to medium power circuit requirements.

Maximum Collector-Emitter Voltage: 160 V

Capable of handling high voltage levels, making it suitable for a variety of applications requiring higher voltage capabilities.

Nominal Transition Frequency (fT): 100 MHz

Offers high frequency operation, ideal for applications requiring fast switching speeds and high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMDT5551-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

160 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MMDT5551-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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